53.1: 2.6 inch HDTV Panel Using CG Silicon

Abstract

inch HDTV panel has been developed on the CORNINNG 1737 glass substrate using low temperature CG Silicon (Continuous Grain Silicon). This time we have fabricated TFTs using CG Silicon which uses crystallization with metal catalyst (Ni) and the process to remove this catalyst from channel regions by gettering below 550[ o C].

Trap properties of asymmetrical double-gate polysilicon thin-film transistors with low frequency noise in terms of the grain boundaries direction

“…The solid lines represent the best fits to equation (3). The extracted densities of the oxide traps near the interface are presented in figure 7 for X-oriented and Yoriented devices with different front gate lengths.…”

“…Many studies have demonstrated the ability of poly-Si based transistors to support a variety of functions beyond pixel switching, which has been the traditional role of TFTs in FPD applications [1]- [3]. High quality poly-Si microstructure is needed for the fabrication of high-quality poly-Si TFTs.…”

9.2: Multi‐Format Digital Display with Content Driven Display Format

“…The VL reference voltage determined by the MSBs charges up the video line through the pre-charge switch to one of 8 possible voltage levels. The table above summarizes the specifications of the 2" QVGA multi-format digital display we have designed and fabricated with a low-temperature Continuous Grain Silicon process [5,6]. This high performance TFT process is especially suitable for integrated digital drivers.…”

54.4: 4.1 inch Top-Emission AMOLED on Flexible Metal Foil

“…Low-temperature polycrystalline silicon (LTPS) on glass have attracted considerable interest for large-area electronics including active-matrix liquid-crystal display (AMLCDs) [1], active-matrix organic light emitting diodes (AMOLEDs) [2], and system-onglass (SOG) [3] due to its high field-effect mobility, compared to amorphous silicon (a-Si).…”

“…[4,5] Sakamoto et al reported the successful fabrication of the a-Si:H TFTs on metal foil. [3] Since the melting points of SS foil is ~1400 ℃, which is similar to that of silicon (1412 ℃), it is possible to exploit the high temperature process to crystallize the amorphous silicon precursor. [6] To realize the top emission AMOLED back planes and CMOS (Complementary Metal-Oxide Semiconductor) circuits, Wagner et al crystallized a-Si on a spinon glass (SOG) / metal foil substrates at the temperature of 900 ℃ for 20s.…”