4H-SiC pin diodes on the (000-1) C-face with reduced forward degradation

Tsuchida

et al. 2005

MSF

The dependence of forward voltage degradation on crystal faces for 4H-SiC pin diodes has been investigated. The forward voltage degradation has been reduced by fabricating the diodes on the (000-1) C-face off-angled toward <11-20>. High-voltage 4H-SiC pin diodes on the (000-1) C-face with small forward voltage degradation have also been fabricated successfully. A high breakdown voltage of 4.6 kV and DVf of 0.04 V were achieved for a (000-1) C-face pin diode. A 8.3 kV blocking performance, which is the highest voltage in the use of (000-1) C-face, is also demonstrated in 4H-SiC pin diode.

Section: Introductionmentioning

confidence: 96%

8.3 kV 4H-SiC PiN Diode on (000-1) C-Face with Small Forward Voltage Degradation

Tsuchida

et al. 2005

MSF

“…However, it has been reported that the drop in forward voltage (V f ) of the 4H-SiC pin diode increases significantly under forward bias, and thus it has been suggested that degradation phenomena occurs in all types of SiC bipolar devices [2]. We reported that ∆V f was minimized by fabricating a pin diode on the C-face off-angled toward <11-20> [3], and the 8.3-kV 4H-SiC pin diode has also been successfully fabricated on the C-face with small forward degradation [4]. In power systems, devices are evaluated for their static and transient losses to assess system efficiency.…”

Section: Introductionmentioning

confidence: 98%

Dynamic Characteristics of 4H-SiC pin Diode on (000-1)C-Face with Small Forward Degradation

Ishii

et al. 2006

MSF

Forward voltage degradation has been reduced by fabricating diodes on the (000-1)C-face. The reverse recovery characteristics of the 4H-SiC pin diode on the (000-1)C-face have been investigated. The pin diode on the C-face has superior potential to that on the Si-face among all parameters of the reverse recovery characteristics. The pin diode on the Si-face after conducting a current stress test tends to exhibit a fast turn-off as compared with that before conducting the stress test. On the C-face, however, there is little difference in reverse recovery characteristics between before and after conducting the current stress test.

“…5) V F drift resulted in increased electric power loss and subsequently higher temperatures for 4H-SiC bipolar devices, which is catastrophic to the device. We have reported that V F drift has been minimized by fabricating a p-i-n diode on the ð000 " 1Þ C-face off-angled toward h11 " 20i; 6) moreover, the 8.3-kV 4H-SiC p-i-n diode has also been successfully fabricated on the ð000 " 1Þ C-face with small V F drift. 7) We have also reported that the ð000 " 1Þ C-face 4H-SiC p-i-n diode has had fast reverse recovery characteristics.…”

Section: Introductionmentioning

confidence: 99%

Drift Phenomena of Forward and Reverse Recovery Characteristics in 0001 4H-SiC p–i–n Diode

Tsuchida

et al. 2011

Jpn. J. Appl. Phys.