Dynamic Characteristics of 4H-SiC pin Diode on (000-1)C-Face with Small Forward Degradation

Abstract

Forward voltage degradation has been reduced by fabricating diodes on the (000-1)C-face. The reverse recovery characteristics of the 4H-SiC pin diode on the (000-1)C-face have been investigated. The pin diode on the C-face has superior potential to that on the Si-face among all parameters of the reverse recovery characteristics. The pin diode on the Si-face after conducting a current stress test tends to exhibit a fast turn-off as compared with that before conducting the stress test. On the C-face, however, there is little difference in reverse recovery characteristics between before and after conducting the current stress test.

Drift Phenomena of Forward and Reverse Recovery Characteristics in 0001 4H-SiC p–i–n Diode

“…7) We have also reported that the ð000 " 1Þ C-face 4H-SiC p-i-n diode has had fast reverse recovery characteristics. 8) This paper describes the drift phenomena of the forward characteristics and reverse recovery characteristics of the ð000 " 1Þ C-face and (0001) Si-face 4H-SiC p-i-n diodes. Moreover, we have investigated the relation between the forward characteristics and reverse recovery characteristics of diodes with V F drift, and propose a recombination model along the perimeter of SSFs.…”