Drift Phenomena of Forward and Reverse Recovery Characteristics in 0001 4H-SiC p–i–n Diode

Nakayama, Koji; Sugawara, Y.; Tsuchida, Hidekazu; Kimura, Chiharu; Aoki, Hidemitsu

doi:10.1143/jjap.50.04df04

Cited by 2 publications

(2 citation statements)

References 25 publications

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“…93) Hence, the propagation of BPDs from the substrate to the epilayer should be avoided. [94][95][96] There are still many unclear points in the behavior and control of the above defects, and they are important issues to be addressed in order to improve device performance in the future. For details, readers are referred to Ref.…”

Section: Task 1: Defects In Substrates and Epilayersmentioning

confidence: 99%

Wide-bandgap semiconductor materials: For their full bloom

Fujita

2015

Jpn. J. Appl. Phys.

306

151

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Wide-bandgap semiconductors are expected to be applied to solid-state lighting and power devices, supporting a future energy-saving society. While GaN-based white LEDs have rapidly become widespread in the lighting industry, SiC-and GaN-based power devices have not yet achieved their popular use, like GaN-based white LEDs for lighting, despite having reached the practical phase.What are the issues to be addressed for such power devices? In addition, other wide-bandgap semiconductors such as diamond and oxides are attracting focusing interest due to their promising functions especially for power-device applications. There, however, should be many unknown phenomena and problems in their defect, surface, and interface properties, which must be addressed to fully exploit their functions. In this review, issues of wide-bandgap semiconductors to be addressed in their basic properties are examined toward their "full bloom".

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Section: Task 1: Defects In Substrates and Epilayersmentioning

confidence: 99%

Wide-bandgap semiconductor materials: For their full bloom

Fujita

2015

Jpn. J. Appl. Phys.

306

151

View full text Add to dashboard Cite

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“…SiC semiconductor is an attractive material for developing high-power, high-temperature, and high-frequency devices, owing to its superior physical properties. However, stacking faults (SFs) are easily incorporated in SiC epitaxial layers and they may cause a severe degradation of SiC power device performances [1,2]. By the way, thermal oxidation is often used in fabrication processes of SiC devices because SiO 2 film grown by it is utilized as a metal-oxide-semiconductor (MOS) junction or a surface passivation film.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence Study of Oxidation-Induced Stacking Faults in 4H-SiC Epilayers

Miyano

Yagi

Hijikata

et al. 2015

MSF

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We have investigated the effect of thermal oxidation on stacking faults (SFs) in 4H-SiC epilayers using photoluminescence imaging. We found that a comb-shaped dislocation array was deformed by thermal oxidation and that SFs were formed on both sides of the comb-shaped dislocation array by a laser irradiation. Transmission electron microscopy has been performed in the comb-shaped dislocation array to observe the stacking pattern of SF near the dislocation. As a result, the SF turned out to be a single Shockley SF (1SSF). We also found that line-shaped faults perpendicular to the off-cut direction were formed during oxidation and were stretched with oxidation time. Moreover, triangle-shaped SFs were formed/expanded from the line-shaped faults by a laser irradiation. The characteristics of these line-shaped faults were discussed.

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Drift Phenomena of Forward and Reverse Recovery Characteristics in 0001 4H-SiC p–i–n Diode

Cited by 2 publications

References 25 publications

Wide-bandgap semiconductor materials: For their full bloom

Wide-bandgap semiconductor materials: For their full bloom

Photoluminescence Study of Oxidation-Induced Stacking Faults in 4H-SiC Epilayers

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