37‐2: Development of high mobility top gate IGZO‐TFT for OLED display.

Takeda, Yasuhiko; Kobayashi, Shunsuke; Murashige, Shogo; Ito, Kazuatsu; Ishida, Izumi; Nakajima, Shin; Matsukizono, Hiroshi; Makita, Naoki

doi:10.1002/sdtp.12970

Cited by 29 publications

(17 citation statements)

References 11 publications

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“…26 In these next-generation FPD applications, the carrier mobility should be improved to be higher than 25 cm 2 /V s for securing sufficient current drivability. 27,28 Thus, it is an urgent issue to enhance the carrier mobility of the TFTs exploiting the ALD-IGZO channel layers, and two technical approaches can be implemented. The precise control of cationic compositions within the active channel can be the first prescription.…”

Section: Introductionmentioning

confidence: 99%

“…However, the maximum value of carrier mobility was obtained to be no more than 15 cm 2 /V s, which was regarded as too a low value to meet severe mobility specifications for highly functional applications such as super Hi-vision and glass-free 3D TV . In these next-generation FPD applications, the carrier mobility should be improved to be higher than 25 cm 2 /V s for securing sufficient current drivability. , Thus, it is an urgent issue to enhance the carrier mobility of the TFTs exploiting the ALD-IGZO channel layers, and two technical approaches can be implemented. The precise control of cationic compositions within the active channel can be the first prescription. − With making the best use of technical benefits during the ALD process, the IGZO compositions can be accurately modulated by controlling the ALD subcycles.…”

Section: Introductionmentioning

confidence: 99%

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Combination of Gate-Stack Process and Cationic Composition Control for Boosting the Performance of Thin-Film Transistors Using In–Ga–Zn–O Active Channels Prepared by Atomic Layer Deposition

Moon

Bae

Kwon³

et al. 2021

ACS Appl. Electron. Mater.

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Combination impacts of controlling the gate-stack process conditions and the indium contents of In–Ga–Zn–O (IGZO) channels prepared by atomic layer deposition (ALD) were investigated to strategically enhance the device performance including carrier mobility for ALD IGZO thin-film transistors (TFTs). The ALD cyclic ratios (triethyl indium/In–Ga precursor/diethyl zinc) were varied to 0:2:2, 2:2:2, and 4:2:2 for the formation of IGZO channels, which correspond to the In/Ga ratios of 0.3, 1.0, and 2.0. While the device using the IGZO channel with an In/Ga ratio of 0.3 did not show any marked difference with the variations in the type of oxidants during the gate-stack formation processes, the carrier concentration and relative amounts of oxygen vacancy within the IGZO channels were found to significantly exhibit an increasing trend with increasing In/Ga ratio, when the Al2O3 protection layer (PL) was prepared with the oxidants incorporating a larger amount of hydrogen-related species. Thus, the physical properties of Al2O3 PL and gate insulator (GI) were controlled by changing the type of oxidants during the ALD processes. As a result, the carrier mobility (9.9 cm2/V s) of the device using an IGZO film with an In/Ga ratio of 0.3 could be enhanced to 23.5 cm2/V s by increasing the In/Ga ratio to 2.0 with the combination of the PL formation process designed with O2-plasma. Furthermore, the carrier mobility additionally improved to 27.6 cm2/V s when the In/Ga ratio increased to 1.4 with simultaneously employing the process conditions using the O3 oxidant for the formations of PL and GI layers. The ALD IGZO TFTs fabricated with the proposed optimum conditions also exhibited excellent bias stabilities.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Combination of Gate-Stack Process and Cationic Composition Control for Boosting the Performance of Thin-Film Transistors Using In–Ga–Zn–O Active Channels Prepared by Atomic Layer Deposition

Moon

Bae

Kwon³

et al. 2021

ACS Appl. Electron. Mater.

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show abstract

“…Amorphous-In-Ga-Zn-oxide (a-IGZO) TFTs (μ = ~10 cm 2 /V.s) have been adopted for large size AMOLED TVs including 55 inch UHD to 88 inch 8K4K [1][2] since a-IGZO TFT was reported by Dr. Hosono's group [3]. In recent researches, there are reports showing that TFTs with higher mobility than 10 cm 2 /V.s are required for internal compensation for AMOLED and self-luminous mini-LED and micro-LED displays to realize high definition, narrow bezel, and high quality display [4][5].…”

Section: Introductionmentioning

confidence: 99%

1.1: Invited Paper: High Mobility Self‐Aligned Coplanar and BCE IGTO Semiconductor TFTs for Future Applications

Seo

et al. 2021

Symp Digest of Tech Papers

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Self‐aligned coplanar structure and back channel etched (BCE) structure have been developed using InGaSnO (IGTO) active layer. The mobility of IGTO TFT is around 25 cm2V−1s−1 for both TFT structures. The 31 inch 4K2K (144ppi) top emission IJP AMOLED driven by self‐aligned coplanar IGTO TFTs and 10.7 inch 120 × 120 (× RGB) mini‐LED display driven by BCE IGTO TFTs are fabricated to verify IGTO TFT's characteristics. High mobility IGTO TFTs have been developed for future applications such as high resolution and narrow bezel OLED displays and micro‐LED displays.

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“…The a-IGZO TFT has already been adopted for large size AMOLED TVs including 55, 65, 77 inch UHD and 88 inch 8K4K in Gen. 8.5 [8,9], which were achieved through optimal conditions of active and SiO2 insulating layer. It could be a necessary device for internal compensation circuit, self-luminous micro-LED display, and Q-NED display [10,11]. Despite these good characteristics, there are still many doubts about the mass-producibility in Gen. 11 facilities.…”

Section: Introductionmentioning

confidence: 99%

34.1: Invited Paper: Availability of a‐IGZO semiconductor TFT in the large size Gen. 11 facilities for competitive high‐end applications

Seo

Sun

et al. 2021

Symp Digest of Tech Papers

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We investigated the four‐phase amorphous‐InGaZnO (a‐IGZO) thin film transistors (TFTs) in the world largest generation 11 factory (Gen.11, 2940mm × 3370mm) which has the cost advantage for future high‐end applications compared to generation 8.5 (Gen. 8.5, 2200mm × 2500mm). Self‐aligned coplanar structure TFT has been developed for large size inkjet printing (IJP) OLED display, and 4 mask back channel etched (BCE) type TFT has been developed for large size 8K4K LCD applications. For the purpose of low cost, high‐end applications, the availability of large size oxide TFT is essential in Gen. 11.

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37‐2: Development of high mobility top gate IGZO‐TFT for OLED display.

Cited by 29 publications

References 11 publications

Combination of Gate-Stack Process and Cationic Composition Control for Boosting the Performance of Thin-Film Transistors Using In–Ga–Zn–O Active Channels Prepared by Atomic Layer Deposition

Combination of Gate-Stack Process and Cationic Composition Control for Boosting the Performance of Thin-Film Transistors Using In–Ga–Zn–O Active Channels Prepared by Atomic Layer Deposition

1.1: Invited Paper: High Mobility Self‐Aligned Coplanar and BCE IGTO Semiconductor TFTs for Future Applications

34.1: Invited Paper: Availability of a‐IGZO semiconductor TFT in the large size Gen. 11 facilities for competitive high‐end applications

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