Abstract:We investigated the four‐phase amorphous‐InGaZnO (a‐IGZO) thin film transistors (TFTs) in the world largest generation 11 factory (Gen.11, 2940mm × 3370mm) which has the cost advantage for future high‐end applications compared to generation 8.5 (Gen. 8.5, 2200mm × 2500mm). Self‐aligned coplanar structure TFT has been developed for large size inkjet printing (IJP) OLED display, and 4 mask back channel etched (BCE) type TFT has been developed for large size 8K4K LCD applications. For the purpose of low cost, hig… Show more
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