32×32 planar IR photovoltaic mosaic arrays on sputtered CdxHg1−xTe epilayers

Abstract

Epitaxial n-type CdxHg1−xTe layers on (111) CdTe substrates have been grown between 250 and 300 °C by sputtering deposition. The standard growth rate was nominally 2 μm/h for a thickness range from 10 to 30 μm. Typical electron concentration in CdxHg1−xTe layers with Cd composition of 0.34 is around of 2×1016 cm−3 with a Hall mobility of 20 000 cm2 V−1 s−1 at 77 K. Films can be converted to p type after annealing. We report for the first time the characteristics of backside illuminated 32×32 planar photovoltaic mosaic arrays processed on sputtered layers. Hybrid structures have been fabricated and evaluated; the preliminary results indicate the suitability of these mosaics for hybrid focal plane applications.