Intrinsic infrared detectors

Rogalski, Antoni; Piotrowski, J.

doi:10.1016/0079-6727(88)90001-8

Cited by 164 publications

(63 citation statements)

References 509 publications

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“…It should be noted that the principles of optical resonant cavity and optical immersion have been already successfully applied to photoelectromagnetic, Dember effect and photovoltaic detectors [2][3][4][5][6]. Comparing the measured detectivities with theoretical limits imposed by unavoidable physics one can see a significant discrepancy.…”

Section: Practical Devicesmentioning

confidence: 89%

“…Hg1-xCdx Te is the most important semiconductor material for infrared detectors used for devices operated the middle and long wavelength spectral range (3-25 pm). A number of reviews on this material and related photodetectors have been published [2][3][4][5][6] Some alternative narrow gap semiconductors are recently investigated including Hg1-xMnxTe, Hg1-xZnxTe, InAs1-xSbx and other alloy systems [7]. The main motivation is to improve the material stability.…”

Section: Introductionmentioning

confidence: 99%

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Infrared Detectors - New Trends

Piotrowski

1995

Acta Phys. Pol. A

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Recent trends in infrared detectors are towards large, electronically addressed two-dimensional arrays and higher operating temperature. This will lead both to higher performance and to smaller, lighter and more affordable IR systems. Cooling requirements are the main obstacle to the more widespread use of infrared systems based on semiconductor photodetectors, particularly in the civil field. Fundamental limitations to performance of IR photodetectors are due to the statistical nature of generation-recombination processes and resulting noise. Ways to overcome the limitations are discussed including use of the optical immersion and optical resonant cavity. Finally, the progress in a mode of operation is presented, in which the thermal generation of carriers is suppressed by the use of stationary depletion of narrow gap semiconductors. The practical near room temperature narrow gap semiconductor photodetectors are reported. Competitive technologies based on Schottky barrier devices and low dimensional solids are considered briefly.

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Section: Practical Devicesmentioning

confidence: 89%

Section: Introductionmentioning

confidence: 99%

Infrared Detectors - New Trends

Piotrowski

1995

Acta Phys. Pol. A

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“…The MUT group is also known for detector modelling, studies of fundamental problems of the infrared detection [33] and, especially, for numerous Rogalski's books and re− view papers on infrared detectors [34][35][36][37][38][39][40][41][42][43].…”

Section: Polish Perspectivementioning

confidence: 99%

History of HgTe-based photodetectors in Poland

Rogalski

2010

Opto-Electronics Review

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In Poland, the HgCdTe studies began in 1960 at the Institute of Physics, Warsaw University. The material processing laboratory was created by Giriat and later by Dziuba, Gałązka, and others. Bridgman technique with sealed thick wall quartz ampoules was used to grow material suitable for research and experimental devices. Among the first papers published in 1961 and 1963 there were the Polish works devoted to preparation, doping, and electrical properties of HgCdTe.Infrared detector’s research and development efforts in Poland were concentrated mostly on uncooled market niche. At the beginning, a modified isothermal vapour phase epitaxy has been used for research and commercial fabrication of photoconductive, photoelectromagnetic and other HgCdTe devices. Bulk growth and liquid phase epitaxy were also used. Recently, the fabrication of infrared devices relies on low temperature epitaxial technique, namely metalorganic vapour phase deposition.At present stage of development, the photoconductive and photoelectromagnetic (PEM) detectors are gradually replaced with photovoltaic devices which offer inherent advantages of no electric or magnetic bias, no heat load and no flicker noise. Potentially, photodiodes offer high performance and very fast response. However, conventional photovoltaic uncooled detectors suffer from low quantum efficiency and very low junction resistance. The problems have been solved with advanced band gap engineered architecture, multiple cell heterojunction devices connected in series, and monolithic integration of the detectors with microoptics.In final part of the paper, the Polish achievements in technology and performance of HgMnTe and HgZnTe photodetectors are presented.

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“…The MUT's group is also known for detector modelling [20], studies of fundamental problems of the infrared detection [21] and, especially, for numerous Rogalski books and excellent review papers on infrared detectors [22][23][24][25][26][27][28][29].…”

Section: Research On Hg 1-x CD X Te and Related Ir Devicesmentioning

confidence: 99%

Uncooled infrared photodetectors in Poland

Piotrowski

2006

Opto-Electronics Review

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The history and present status of the middle and long wavelength Hg1-xCdxTe infrared detectors in Poland are reviewed. Research and development efforts in Poland were concentrated mostly on uncooled market niche.Technology of the infrared photodetectors has been developed by several research groups. The devices are based on mercury-based variable band gap semiconductor alloys. Modified isothermal vapour phase epitaxy (ISOVPE) has been used for many years for research and commercial fabrication of photoconductive, photoelectromagnetic and other devices. Bulk growth and liquid phase epitaxy was also used. At present, the fabrication of IR devices relies on low temperature epitaxial technique, namely metalorganic vapour phase deposition (MOCVD), frequently in combination with the ISOVPE.Photoconductive and photoelectromagnetic detectors are still in production. The devices are gradually replaced with photovoltaic devices which offer inherent advantages of no electric or magnetic bias, no heat load and no flicker noise. Potentially, the PV devices could offer high performance and very fast response. At present, the uncooled long wavelength devices of conventional design suffer from two issues; namely low quantum efficiency and very low junction resistance. It makes them useless for practical applications. The problems have been solved with advanced 3D band gap engineered architecture, multiple cell heterojunction devices connected in series, monolithic integration of the detectors with microoptics and other improvements. Present fabrication program includes devices which are optimized for operation at any wavelength within a wide spectral range 1–15 μm and 200–300 K temperature range. Special solutions have been applied to improve speed of response. Some devices show picoseconds range response time. The devices have found numerous civilian and military applications.

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Intrinsic infrared detectors

Cited by 164 publications

References 509 publications

Infrared Detectors - New Trends

Infrared Detectors - New Trends

History of HgTe-based photodetectors in Poland

Uncooled infrared photodetectors in Poland

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