We present here a general survey of our activity since 1981. We show that n- or p-type CdxHg1−xTe with low carrier concentration, high mobility and crystal perfection limited by the substrate itself can be grown by molecular beam epitaxy (MBE) between 180 and 210 °C onto CdTe(111) and (100) orientation. We report for the first time the characteristics of a photovoltaic device processed on a p-type CdxHg1−xTe MBE layer which proves that this material can be grown by MBE with a detection device specification. We also give some information concerning 100 periods of 224 Å CdTe–HgTe superlattice previously reported.
Current tendencies in infrared arrays are to decrease the pitch and increase the number of detectors without degrading the electro-optical performances. It is therefore necessary to maximize the charge-handling capacity in the pixel. In this paper, a new architecture particularly-well suited to this kind of application is described.-A brief review of classical readout circuits is given. The advantages and drawbacks of these architectures are emphasized.-The new architecture is discussed in detail, compared to existing ones and the performance ofthe new readout circuit evaluated.Results measured on IRCMOS designed with the new architecture are presented.
Epitaxial n-type CdxHg1−xTe layers on (111) CdTe substrates have been grown between 250 and 300 °C by sputtering deposition. The standard growth rate was nominally 2 μm/h for a thickness range from 10 to 30 μm. Typical electron concentration in CdxHg1−xTe layers with Cd composition of 0.34 is around of 2×1016 cm−3 with a Hall mobility of 20 000 cm2 V−1 s−1 at 77 K. Films can be converted to p type after annealing. We report for the first time the characteristics of backside illuminated 32×32 planar photovoltaic mosaic arrays processed on sputtered layers. Hybrid structures have been fabricated and evaluated; the preliminary results indicate the suitability of these mosaics for hybrid focal plane applications.
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