Latest developments in the growth of Cd<i>x</i>Hg1−<i>x</i>Te and CdTe–HgTe superlattices by molecular beam epitaxy

Faurie, J. P.; Million, A.; Boch, R.; Tissot, Jean-Luc

doi:10.1116/1.572274

Cited by 66 publications

(5 citation statements)

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“…The growth of compound thin films from component molecular beams has been described by many investigators (Gunther, 1968;Smith and Pickhardt, 1975;Faurie et al, 1983Faurie et al, , 1985Chow and Johnson, 1985;Jansen and Melnyk, 1984;Foxon, 1983;Kawabe and Matsiura, 1984;Myers et al, 1982;Summers et al, 1984) with general agreement that the conversion or utilization of one species and the film composition vary with the substrate temperature and flux of the other components. A simplified description of the generally accepted mechanisms that explain this behavior follows.…”

Section: Thicknessmonitormentioning

confidence: 99%

A chemical reaction model for physical vapor deposition of compound semiconductor films

et al. 1987

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A model for the physical vapor deposition of compound semiconductor films that describes film growth from component molecular beams is presented. Constitutive relationships are used in the model to account for incomplete adsorption from the incident molecular beams, emission of adsorbed components into vacuum, and surface reactions of the elemental species. The model predicts film composition and growth rate as a function of incident fluxes and substrate temperature. It is applicable for important binary and ternary alloy semiconductors including the li-VI and Ill-V compounds over the range of deposition conditions yielding both stoichiometric and two-phase films. In this paper the model equations and the behavior predicted by the model are described for a number of material systems including (CdHg)Te, (CdZn)S, and CulnSe,.

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Section: Thicknessmonitormentioning

confidence: 99%

A chemical reaction model for physical vapor deposition of compound semiconductor films

et al. 1987

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“…For a growth rate of 0.03−0.07 nm/ns and a fixed Hg/Te flux ratio of 1.4, there is an exponential decrease in the Hg sticking coefficient as the substrate temperature increases. While this trend matches that of the experiments, the values are orders of magnitude off, where the experimental Hg sticking coefficients are of the order 10 −2 −10 −3 for substrate temperatures of 400−480 K. 53 Whether this discrepancy is due to the form of the SW potential or the accelerated simulated growth rates being orders of magnitudes faster than the experimental growth rates (∼2−3 μm/h 16 ), or both is not clear. The Cd and Te sticking coefficients are close to unity for all substrate temperatures, consistent with experimental observations.…”

Section: ■ Results and Discussionmentioning

confidence: 59%

Molecular Dynamics Study of Heteroepitaxial Growth of HgCdTe on Perfect and Dislocated (211)B CdZnTe Substrates

Hew

Spagnoli

Faraone

2021

ACS Appl. Electron. Mater.

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The presence of threading dislocations in the depletion region of Hg1–x Cd x Te detectors remains a problem due to its negative impact on the electrical and electronic properties of these detectors. We used molecular dynamics (MD) simulations to study the impact of the simulated growth rate, substrate temperature, and Hg/Te flux ratio on the Hg sticking coefficient and crystallinity of Hg1–x Cd x Te on a perfect (211)B CdZnTe substrate during molecular beam epitaxy (MBE) growth. The trends were consistent with the experiments, namely, a decrease in crystallinity with an increase in the growth rate, the exponential decrease of the Hg sticking coefficient with the increase in substrate temperature, and an optimum substrate temperature and Hg/Te flux ratio for a given growth rate. We then used one of the optimum growth conditions found to conduct MD simulations on (211)B CdZnTe substrates with a quadrupole of either 0° perfect, 60° perfect, 30° partial, or 90° partial dislocations. All dislocations extended into the epilayer as expected and various phenomena were observedchange of line direction, movement by climb, and the dissociation of a glide perfect dislocation into two partials. These phenomena give insight into the types of low-energy dislocations that may be present in Hg1–x Cd x Te after MBE growth.

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“…The substrate surface temperature (measured by spectroscopic ellipsometry) for an NVESD ECRDetermination of the Ion Angular Distribution for Electron Cyclotron Resonance, Plasma-Etched HgCdTe Trenches 549 etched sample is between 50°C and 80°C. The substrate surface temperature increases as a function of the DC-bias input power, but it is less than 80°C at 180 W. Faurie et al 26 measured the sticking coefficient (incorporated Hg atoms/incident Hg atoms) for thermally evaporated Hg on HgCdTe. Extrapolating their data (measured values ranged from 200°C to 120°C), the sticking coefficients of thermally evaporated Hg atoms are approximately 0.9 and 0.2 at 50°C and 80°C, respectively.…”

Section: Sputter-bombardment Component Of Hgcdte Ecr Etchingmentioning

confidence: 98%

Determination of the ion angular distribution for electron cyclotron resonance, plasma-etched HgCdTe trenches

Benson

Stoltz

Varesi

et al. 2004

Journal of Elec Materi

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Ion angular distribution (IAD) affects the width and aspect ratio in electron cyclotron resonance (ECR)-etched HgCdTe trenches. The IAD was determined by etching studies together with scanning electron microscopy (SEM) analysis. The results confirm that low-energy, large-angle ions contribute to the etching of the photoresist, while higher-energy, low-angle ions are responsible for HgCdTe etching. The HgCdTe ECR etching was further elucidated by sputterbombardment theory. This model correctly predicts the nature and depth of the damage region in ECR-etched HgCdTe as well as the distribution and composition of the ejected material.

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Latest developments in the growth of CdxHg1−xTe and CdTe–HgTe superlattices by molecular beam epitaxy

Cited by 66 publications

References 0 publications

A chemical reaction model for physical vapor deposition of compound semiconductor films

A chemical reaction model for physical vapor deposition of compound semiconductor films

Molecular Dynamics Study of Heteroepitaxial Growth of HgCdTe on Perfect and Dislocated (211)B CdZnTe Substrates

Determination of the ion angular distribution for electron cyclotron resonance, plasma-etched HgCdTe trenches

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