21.63% industrial screen-printed multicrystalline Si solar cell

Abstract

In this paper, we demonstrate industrially feasible large‐area solar cells achieving energy conversion efficiency up to 21.63% on p‐type boron doped multicrystalline Si wafers. Advanced light trapping, passivation and hydrogenation technology are used to achieve excellent light absorption with very low surface recombination velocity. The bulk lifetime of the multi‐crystalline Si wafers used for the fabrication exceeds 500 μs after optimized gettering and hydrogenation processes. The high bulk lifetime and excellent surface passivation enable Voc to exceed 670 mV. The metallization process is carried out by screen printing and firing in a conventional belt furnace. Detailed performance parameters and quantum efficiency of the cells will be illustrated in the paper. In addition, free energy loss analysis and cell simulation are also performed using the control parameters measured during cell fabrication processes.

Cost Analysis of Perovskite Tandem Photovoltaics

“…PCE of $21.0% in line production is claimed, which is predominant in the PV market. 27 This represents one of the major competitors that perovskite PVs face. The cell in module B is based on the planar structure of a perovskite solar device, which can be fabricated using low-temperature processing techniques such as screen printing and dip coating.…”

Improved emitter performance of RIE black silicon through the application of in-situ oxidation during POCl3 diffusion

“…In recent years, nano-scaled texturing has been used to reduce the optical loss of c-Si solar cells resulting in improved cell efficiency [1,2]. For example, RIE based texturing has been applied to large area mc-Si front junction solar cells to achieve world record results [3,4]. Furthermore, a shallower form of black silicon formed via chemical etching has been used to address manufacturing problems related to diamond wire sawing [5], to improve cell efficiency [6] and has become standard in production lines [7].…”

P‐type Upgraded Metallurgical‐Grade Multicrystalline Silicon Heterojunction Solar Cells with Open‐Circuit Voltages over 690 mV

“…With the addition of the UNSW Advanced Hydrogenation Process (AHP), which has been effective in passivating bulk defects and mitigating LID caused by the boron–oxygen complex and carrier‐induced defects in p‐type mc‐Si, a further increase in V OC was achieved, with an independently certified value of 707 mV . The same method, when applied to p‐type SG mc‐Si silicon, has resulted in a V OC of 702 mV, which exceeds the V OC of record efficiency solar cells fabricated on either n‐type or p‐type high‐performance mc‐Si by approximately 30 mV . These defect‐engineering approaches have also been applied to n‐type UMG silicon, with Sun et al.…”

“…[33] The same method, when applied to p-type SG mc-Si silicon, has resulted in a V OC of 702 mV, [33] which exceeds the V OC of record efficiency solar cells fabricated on either n-type or p-type high-performance mc-Si by approximately 30 mV. [34,35] These defect-engineering approaches have also been applied to n-type UMG silicon, with Sun et al reporting voltages as high as 720 mV for a SHJ solar cell fabricated using defectengineered n-type Cz UMG wafers. [36] In this instance, prior to cell fabrication, the cells received Tabula Rasa, phosphorus gettering, SiN x :H deposition, and firing processes.…”