2019
DOI: 10.1002/pssa.201900319
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P‐type Upgraded Metallurgical‐Grade Multicrystalline Silicon Heterojunction Solar Cells with Open‐Circuit Voltages over 690 mV

Abstract: Herein, low‐cost p‐type upgraded metallurgical‐grade (UMG) multicrystalline silicon wafers are processed from the edge of the silicon cast using a multi‐stage defect‐engineering approach, incorporating gettering and hydrogenation to improve the wafer quality. Significant reductions in the concentration of interstitial iron and improvements in the bulk lifetime from 15 to 130 µs are observed. Subsequently, all the surface layers are removed and silicon heterojunction solar cells are fabricated. The cells exhibi… Show more

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Cited by 9 publications
(3 citation statements)
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References 47 publications
(83 reference statements)
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“…Because SHJ cells do not undergo this process, high-quality n-type Cz wafers are required for achieving high-efficiency SHJ cells. This argument was used in a recent review [25] to draw attention to defect engineering in SHJ cells to facilitate the use of lower-quality silicon wafers such as those made from low-lifetime SoG silicon [31], upgraded metallurgical-grade (UMG) silicon [32], and high-performance multicrystalline wafers [33]. Particularly in [31], it was shown how gettering plus hydrogenation can result in an increase of more than 70 mV for SHJ cells fabricated from low-lifetime SoG p-type Cz wafers.…”
Section: Pv Solar Industry and Trendsmentioning
confidence: 99%
“…Because SHJ cells do not undergo this process, high-quality n-type Cz wafers are required for achieving high-efficiency SHJ cells. This argument was used in a recent review [25] to draw attention to defect engineering in SHJ cells to facilitate the use of lower-quality silicon wafers such as those made from low-lifetime SoG silicon [31], upgraded metallurgical-grade (UMG) silicon [32], and high-performance multicrystalline wafers [33]. Particularly in [31], it was shown how gettering plus hydrogenation can result in an increase of more than 70 mV for SHJ cells fabricated from low-lifetime SoG p-type Cz wafers.…”
Section: Pv Solar Industry and Trendsmentioning
confidence: 99%
“…Vicari Stefani et al presented a study on defect engineering in p‐type UMG mc‐Si wafers from the edge of the silicon cast. [ 48 ] These wafers, referred to as “red zone” wafers, contain severe impurity contamination at the edges due to impurities that diffuse from the crucible wall during crystallization. Defect engineering approaches led to significant increases in the effective lifetime, which increased from 9 μs for the control to 39 μs in the G + H group.…”
Section: Defect Engineering Approachesmentioning
confidence: 99%
“…and structural defects, such as grain boundaries, dislocations, second-phase precipitates, oxidation-induced stacking faults (OISF), etc. [11][12][13] All of them strongly affect the minority carrier lifetime and hence the solar cell efficiency. Fe is especially problematic because the element has high solubility and diffusivity at thermal treatments.…”
Section: Introductionmentioning
confidence: 99%