20nm Gate length Schottky MOSFETs with ultra thin NiSi/epitaxial NiSi&lt;inf&gt;2&lt;/inf&gt; source/drain

Knöll, L.; Zhao, Qing‐Tai; Lupták, R.; Trellenkamp, S.; Bourdelle, K.K.; Mantl, S.

doi:10.1109/ulis.2011.5757986

Cited by 4 publications

(2 citation statements)

References 7 publications

(12 reference statements)

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“…below the critical thickness) exhibits very high morphological stability. Knoll et al [12,13] furthermore reported on the beneficial effect of the lower Schottky barrier height of these epitaxial NiSi 2 films.…”

Section: Introductionmentioning

confidence: 97%

Controlling the formation and stability of ultra-thin nickel silicides - An alloying strategy for preventing agglomeration

Geenen

Stiphout

Nanakoudis

et al. 2018

Journal of Applied Physics

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The electrical contact of the source and drain regions in state-of-the-art CMOS transistors is nowadays facilitated through NiSi, which is often alloyed with Pt in order to avoid morphological agglomeration of the silicide film. However, the solid-state reaction between as-deposited Ni and the Si substrate exhibits a peculiar change for as-deposited Ni films thinner than a critical thickness of t c =5 nm. Whereas thicker films form polycrystalline NiSi upon annealing above 450 • C, thinner films form epitaxial NiSi 2 films which exhibit a high resistance towards agglomeration. For industrial applications, it is therefore of utmost importance to assess the critical thickness with high certainty and find novel methodologies to either increase or decrease its value, depending on the aimed silicide formation. This paper investigates Ni films between 0 and 15 nm initial thickness by using of 'thickness gradients', which provide semi-continuous information on silicide formation and stability as a function of as-deposited layer thickness. The alloying of these Ni layers with 10 % Al, Co, Ge, Pd or Pt renders a significant change in the phase sequence as a function of thickness and dependent on the alloying element. The addition of these ternary impurities therefore change the critical thickness t c. The results are discussed in the framework of

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Section: Introductionmentioning

confidence: 97%

Controlling the formation and stability of ultra-thin nickel silicides - An alloying strategy for preventing agglomeration

Geenen

Stiphout

Nanakoudis

et al. 2018

Journal of Applied Physics

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“…encroachment into the sSi channel after completed processing. The ultrathin epitaxial NiSi 2 also offers high uniformity along the gate edges as we demonstrate for a planar structure [14]. [7], [9], [10], [15], [16].…”

Section: Device Fabricationmentioning

confidence: 87%

Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors

Knöll

Zhao

Nichau

et al. 2013

IEEE Electron Device Lett.

182

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Inverters based on uniaxially tensile strained Si (sSi) nanowire (NW) tunneling field-effect transistors (TFETs) are fabricated. Tilted dopant implantation using the gate as a shadow mask allows self-aligned formation of p-i-n TFETs. The steep junctions formed by dopant segregation at low temperatures improve the band-to-band tunneling, resulting in higher oncurrents of n- and p-TFETs of >10 μA/μm at VDS = 0.5 V. The subthreshold slope for n-channel TFETs reaches a minimum value of 30 mV/dec, and is <60 mV/dec over one order of magnitude of drain current. The first sSi NW complementary TFET inverters show sharp transitions and fairly high static gain even at very low VDD = 0.2 V. The first transient response analysis of the inverters shows clear output voltage overshoots and a fall time of 2 ns at VDD = 1.0 V

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Computational study of dopant segregated nanoscale Schottky barrier MOSFETs for steep slope, low SD-resistance and high on-current gate-modulated resonant tunneling FETs

Afzalian

Flandre

2011

Solid-State Electronics

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20nm Gate length Schottky MOSFETs with ultra thin NiSi/epitaxial NiSi<inf>2</inf> source/drain

Cited by 4 publications

References 7 publications

Controlling the formation and stability of ultra-thin nickel silicides - An alloying strategy for preventing agglomeration

Controlling the formation and stability of ultra-thin nickel silicides - An alloying strategy for preventing agglomeration

Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors

Computational study of dopant segregated nanoscale Schottky barrier MOSFETs for steep slope, low SD-resistance and high on-current gate-modulated resonant tunneling FETs

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