All existing transistors are based on the use of semiconductor junctions formed by introducing dopant atoms into the semiconductor material. As the distance between junctions in modern devices drops below 10 nm, extraordinarily high doping concentration gradients become necessary. Because of the laws of diffusion and the statistical nature of the distribution of the doping atoms, such junctions represent an increasingly difficult fabrication challenge for the semiconductor industry. Here, we propose and demonstrate a new type of transistor in which there are no junctions and no doping concentration gradients. These devices have full CMOS functionality and are made using silicon nanowires. They have near-ideal subthreshold slope, extremely low leakage currents, and less degradation of mobility with gate voltage and temperature than classical transistors.

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We report the fabrication of junctionless SOI MOSFETs. Such devices greatly simplify processing thermal budget and behave as regular multigate SOI transistors.

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Efficient schemes for the non-equilibrium Green’s function simulation in the mode space formalism of electron-phonon scattering using the self-consistent Born approximation in nanoscale devices are presented, both using an “exact” and phenomenological Büttiker probe treatment of electron-phonon-scattering. In both cases we have generalized the expressions previously developed for the case of uncoupled mode space to coupled mode space. In the case of the phenomenological Büttiker probe treatment, we have also adapted the expressions used in the exact treatment in order to propose a new microscopic approach of phonon scattering using no analytical or average relaxation time approximations. This allows us to evaluate the accuracy and validity of the Büttiker probe assumption of the existence of a Fermi function in nanoscale devices. Our findings are that if the trends of the exact scattering are approximately reproduced by the Büttiker probe method, it seems to overestimate the on-current for a large range of devices with a channel length of a few tens of nanometers and a drain voltage higher than 100 mV.

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