SOI gated resistor: CMOS without junctions

Abstract

We report the fabrication of junctionless SOI MOSFETs. Such devices greatly simplify processing thermal budget and behave as regular multigate SOI transistors.

Reduced electric field in junctionless transistors

“…4 Recently, a nanowire transistor called the "junctionless transistor" or the "gated resistor" has been introduced. 5,6 It is made of an N + ͑or P + for a p-channel device͒ doped silicon nanowire with a gate electrode. The doping concentration typically ranges between 10 19 and 8 ϫ 10 19 cm −3 .…”

“…Using a trigate device architecture it is possible to turn the device on and off and to obtain MOSFET-like electrical characteristics. 5,6 Even though the electrical characteristics of the junctionless transistor are similar to those of a regular MOSFET, there is a fundamental difference between the two devices. Classical MOSFETs, including multigate field-effect transistor, are normally-off devices, as the drain junction is reverse biased and blocks current flow if no channel is created between source and drain.…”

Low subthreshold slope in junctionless multigate transistors

“…The device is a multigate silicon nanowire ͑or nanoribbon͒ with a pi-gate ͑multigate͒ architecture and a uniform, heavy doping concentration across the device. 7,8 The fabricated devices reported here have a width ranging from 20 to 50 nm, a thickness ranging from 5 to 10 nm and a gate length of 1 m. The gate oxide thickness is 10 nm and the buried oxide thickness is 340 nm. The junctionless transistors are n-channel devices with a unoform n-type doping concentration of 10 19 cm −3 in the source, drain and channel region.…”

Drain current model for short-channel triple gate junctionless nanowire transistors

“…1) has been proposed [12,13]. The JNT is basically a uniformly doped stripe of silicon from source to drain terminals, surrounded by the gate stack, working as a multiple gated resistor [14]. The junctionless transistors seem to be an interesting proposal for the ultimate technological nodes, once it has shown many advantages over IM transistors for both analog and digital applications [15][16][17].…”