Physical Modeling and Design of Thin-Film SOI Lateral PIN Photodiodes

Low-Wavelengths SOI CMOS Photosensors for Biomedical Applications

“…Referring to equation 1, the responsivity can thus be enhanced by increasing the photocurrent, which is can be obtained by reducing the dark current and optimizing the reverse bias of the photodiode, Vd. Raising Vd indeed increases the region where the photons generate electron-hole pairs (Afzalian & Flandre, 2005), however, the generation current also increases, but so does the dark current that itself decreases the photocurrent, and thus the responsivity. It has also been demonstrated that adding an anti-reflection coating greatly improves the sensitivity of the photodiode.…”

“…When realizing this device in the thin film of a SOI wafer, we implement a lateral PIN diode. This device has been used in this abstract as a reference, according to the good results found in the literature and its compatible fabrication with a standard CMOS process (Afzalian & Flandre, 2005). The photocurrent, previously introduced in equation 1, can also be defined as:…”

Design of Thin-Film Lateral SOI PIN Photodiodes with up to Tens of GHz Bandwidth

“…Thin-film SOI integrated devices appear as the best candidate to cope with these high-speed requirements, notably for the 10Gb/s Ethernet standard (Afzalian & Flandre, 2005;2006.a;Csutak et al, 2002). For such bandwidths design trades-off between speed and responsivity are very severe and require a careful optimization (Afzalian & Flandre, 2006.b).…”

“…There is however a lack of these accurate models in the literature so that time consuming devices simulations are often the only solution. In (Afzalian & Flandre, 2005), we have proposed such an accurate analytical model for the responsivity of thin-film SOI photodiodes. In here, thorough analytical modeling of AC performances of thin-film lateral SOI PIN photodiodes will be addressed.…”

Image Sensor with General Spatial Processing in a 3D Integrated Circuit Technology

“…The typical absorption length for visible light in silicon is many microns, far greater than the thickness of the silicon film in typical modern fully-depleted (FD) silicon-on-insulator or siliconon-sapphire processes. Previous works have focused on achieving respectable levels of quantum efficiency by using lateral PIN photodiodes with large photosensitive intrinsic regions, while balancing the tradeoff between quantum efficiency and pixel area [3], [4].…”