2.4kV GaN Polarization Superjunction Schottky Barrier Diodes on semi-insulating 6H-SiC substrate

Unni, Vineet; Long, Hong Yao; Sweet, M.; Balachandran, Ajith; Narayanan, E.M. Sankara; Nakajima, Akira; Kawai, H.

doi:10.1109/ispsd.2014.6856022

Cited by 19 publications

(19 citation statements)

References 6 publications

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“…Polarization Superjunction (PSJ) is a unique technique to achieve charge balance not through impurity‐based doping control, but by engineering of positive and negative polarization charges inherent in the GaN material. PSJ technology is based on a GaN/AlGaN/GaN double heterostructure (grown along the (0001) crystal axis), where positive and negative polarization charges coexist at the AlGaN (

000 \bar{1}

)/GaN(0001) interface with two‐dimensional electron gas (2DEG) accumulation and GaN(

000 \bar{1}

)/AlGaN(0001) interface with two‐dimensional hole gas (2DHG) accumulation, respectively . The basic concept/structure has been illustrated in Fig.…”

Section: Polarization Superjunctionmentioning

confidence: 99%

Low cost high voltage GaN polarization superjunction field effect transistors

Kawai

Yagi

Hirata

et al. 2017

Phys. Status Solidi A

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A comprehensive overview of novel high voltage GaN field effect transistors (FETs) based on the Polarization Superjunction (PSJ) concept and a cost-effective approach towards manufacturing these high performance devices are presented. Current challenges impeding wider adoption of GaN power switching transistors in applications, and latest results of scaled-up PSJ-FETs from POWDEC KK, have also been discussed. The article also presents hard-switching characteristics of 400V-to-800V boost converter constructed using a PSJ-FET grown on sapphire substrate and the future direction of GaN power semiconductor technology based on monolithic integration for advanced power electronics.

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000 \bar{1}

)/GaN(0001) interface with two‐dimensional electron gas (2DEG) accumulation and GaN(

000 \bar{1}

)/AlGaN(0001) interface with two‐dimensional hole gas (2DHG) accumulation, respectively . The basic concept/structure has been illustrated in Fig.…”

Section: Polarization Superjunctionmentioning

confidence: 99%

Low cost high voltage GaN polarization superjunction field effect transistors

Kawai

Yagi

Hirata

et al. 2017

Phys. Status Solidi A

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“…Therefore, the 2DHG and 2DEG conductivities show the almost constant values at the low temperatures. Due to the temperature stabilities of the 2DHG and 2DEG, wide temperature operation of high-voltage PSJ devices [7], [8], and also low-voltage N-ch and P-ch devices for gate drive and logic circuits, is expected. Table I.…”

Section: Characterisation Of Pj Platform Wafermentioning

confidence: 99%

“…In previously, we have developed polarization junction (PJ) wafers as platforms of GaN power ICs [6], and demonstrated HV N-ch HFETs and Schottky barrier diodes (SBDs) using polarization superjunction (PSJ) concept [7,8], and LV P-ch and N-ch HFETs on the platforms [5]. In this paper, we report monolithic operations of the all developed GaN devices on a PJ platform.…”

Section: Introductionmentioning

confidence: 99%

GaN-based monolithic power integrated circuit technology with wide operating temperature on polarization-junction platform

Nakajima

Nishizawa

Ohashi

et al. 2015

2015 IEEE 27th International Symposium on Power Semiconductor Devices &Amp; IC's (ISPSD)

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Polarization junction platforms have high-density 2D hole gas (2DHG) and 2D electron gas (2DEG) respectively induced by negative and positive polarization charges in undoped GaN/AlGaN/GaN double heterostructures. Sheet resistance measurements in a wide temperature range (6-460 K) revealed that 2DHG and 2DEG resistances were monotonically enhanced with the temperature reduction. On the platform, monolithic operations of GaN-based devices including high-voltage nchannel (N-ch) transistors, N-ch Schottky diodes, low-voltage Nch transistors and p-channel transistors has been demonstrated.

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“…In so doing, focus is placed on electron drift region; specifically, the paper examines and evaluates (1) devices with uniform drift region (Uni. devices), (2) devices with superjunctions (SJ), and (3) devices with hetero superjunctions (HSJ) . Particularly, GaAs lateral HSJ devices that were considered unsuitable for high voltage applications are shown to promise excellent characteristics.…”

Section: Introductionmentioning

confidence: 99%

Possibility of reducing the on‐resistance in 1 kV‐class lateral superjunction power devices based on III‐V semiconductors

Kushida

Sakaki

2019

Elect Comm in Japan

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Potentials of lateral hetero superjunction (HSJ) power devices, that are based on III‐V semiconductors such as GaN and GaAs, are analyzed theoretically to clarify how the product RON·A of their on‐resistance RON and device area A depends on the breakdown voltage. By focusing on power devices having the breakdown voltage of about 1 kV, we clarify to which level the specific on‐resistance RON·A of various devices can be reduced by the selection of the device structures and materials. It has been found out that the lowest limit of RON·A for HSJ devices can be lower than that of Si‐insulated gate bipolar transistors, and also than that of vertical power FETs based on SiC and/or GaN. We note in particular that not only GaN‐based HSJ devices but also GaAs‐based HSJ devices possess outstanding potential because of the high electron mobility nature of these heterojunction structures.

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2.4kV GaN Polarization Superjunction Schottky Barrier Diodes on semi-insulating 6H-SiC substrate

Cited by 19 publications

References 6 publications

Low cost high voltage GaN polarization superjunction field effect transistors

Low cost high voltage GaN polarization superjunction field effect transistors

GaN-based monolithic power integrated circuit technology with wide operating temperature on polarization-junction platform

Possibility of reducing the on‐resistance in 1 kV‐class lateral superjunction power devices based on III‐V semiconductors

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