GaN-based monolithic power integrated circuit technology with wide operating temperature on polarization-junction platform

Nakajima, Akira; Nishizawa, Satoshi; Ohashi, Hiromichi; Kayanuma, Rei; Tsutsui, Kazuo; Kubota, Shunsuke; Kakushima, Kuniyuki; Wakabayashi, Hitoshi

doi:10.1109/ispsd.2015.7123463

Cited by 9 publications

(2 citation statements)

References 12 publications

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“…Silicon (Si)-based power integrated-circuit (IC) technologies have been widely utilised in high-frequency, low-power applications up to several hundreds of watts [2,3]. On the contrary, gallium nitride (GaN)-based heterojunction field-effect transistors (HFETs) utilising polarisation-induced two-dimensional electron gas (2DEG) are emerging components for next-generation power ICs [4][5][6][7][8][9][10][11][12][13]. Fig.…”

Section: Introductionmentioning

confidence: 99%

GaN‐based complementary metal–oxide–semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation‐induced holes and electron channels

Nakajima

Kubota

Tsutsui

et al. 2018

IET Power Electronics

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Gallium nitride (GaN)-based P-channel (Pch) and N-channel (Nch) metal-oxide-semiconductor field-effect transistors (MOSFETs) with normally off operations were realised. Both Pch and Nch MOSFETs were monolithically fabricated in a polarisation-junction platform wafer. The platform wafer was constructed with a GaN/aluminium GaN/GaN double heterostructure, which has both two-dimensional hole gas (2DHG) and 2D electron gas (2DEG). The drain currents of Pch and Nch MOSFETs flow through 2DHG and 2DEG, respectively. The threshold gate voltages of the fabricated Pch and Nch MOSFETs were −2.7 and 6.7 V, respectively. It was shown that the threshold voltage and the on-state resistance of the Pch MOSFET can be controlled by adjusting the 2DEG potential. Furthermore, using Pch and Nch MOSFETs, complementary MOS inverter operation was demonstrated.

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Section: Introductionmentioning

confidence: 99%

GaN‐based complementary metal–oxide–semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation‐induced holes and electron channels

Nakajima

Kubota

Tsutsui

et al. 2018

IET Power Electronics

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“…This would allow the design of complementary driver stages and higher functional logic circuits. Promising achievements have been presented in [42][43][44]. However, the hole carrier mobility in the channel is significantly lower compared with electron mobilities in unipolar n-type GaN technologies.…”

Section: Discussion and Further Challengesmentioning

confidence: 99%

Monolithically integrated power circuits in high‐voltage GaN‐on‐Si heterojunction technology

Reiner

Waltereit

Weiss

et al. 2018

IET Power Electronics

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This study presents monolithically integrated power circuits, fabricated in a high-voltage GaN-on-Si heterojunction technology. Different advanced concepts are presented and compared with solutions found in the literature. High switching transition slew rates are demonstrated by means of a monolithic power circuit with integrated gate driver. A highly linear temperature sensor is integrated in a GaN-high-electron-mobility transistor (HEMT) power device for the 600 V class and onstate resistance of 53 mΩ. An area-efficient HEMT structure with integrated freewheeling diodes is presented. This structure is applied in a monolithic multilevel converter chip, as well as in a 600 V class half-bridge chip. The multilevel chip is integrated by an advanced printed circuit board embedding technology and tested in inverter operation with a mains voltage output of 120 V RMS. The performance of the half-bridge is demonstrated in a synchronous buck converter operation from 400 to 200 V and with a switching frequency of 3 MHz.

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GaN-Based Lateral and Vertical Devices

Meneghini

Chowdhury²,

Derluyn³

et al. 2022

Springer Handbook of Semiconductor Devices

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GaN-based monolithic power integrated circuit technology with wide operating temperature on polarization-junction platform

Cited by 9 publications

References 12 publications

GaN‐based complementary metal–oxide–semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation‐induced holes and electron channels

GaN‐based complementary metal–oxide–semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation‐induced holes and electron channels

Monolithically integrated power circuits in high‐voltage GaN‐on‐Si heterojunction technology

GaN-Based Lateral and Vertical Devices

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