16.1: Negative‐Bias Photodegradation Mechanism in InGaZnO TFT

Abstract

Recent studies have shown that IGZO are variously influenced by photoirradiation. In this study, by using measurement results of optical properties and calculation results, a relationship of defect levels in the IGZO films and the SiO 2 films to negative-bias photodegradation was examined, and the mechanism of the degradation was revealed.

33.1: Channel‐Etched C‐Axis Aligned Crystalline Oxide Semiconductor FET Using Cu Wiring

“…Although the formation of a single-crystal IGZO thin film requires annealing at temperatures of greater than or equal to 1000 C [3][4] , the formation of a CAAC-IGZO thin film over a glass substrate requires annealing at less than or equal to 500 C. We succeeded in forming a channel-etched OS field-effect transistor (FET) that uses CAAC-IGZO for an active layer and has improved characteristics and improved reliability by lowering the defect levels [5][6][7][8][9] .…”

P‐13: The Relationship Between Crystallinity and Device Characteristics of In‐Sn‐Zn‐Oxide

“…[4][5] In particular, CAAC-IGZO thin films have very low defect level density in the gap; therefore, field effect transistors (FET) with the CAAC-IGZO thin films as an active layer have good characteristics and reliability. In addition, because of the durability of the CAAC-IGZO to etching gas, it is possible to adopt a channel-etch process [6]. Furthermore, the CAAC-IGZO can be formed on a glass substrate at a relatively low temperature, under 500 ºC, unlike the case of single crystal IGZO [7][8] requiring high temperature, 1200 ºC or higher.…”

28.2: Genuinely Wearable Display with a Flexible Battery, a Flexible Display Panel, and a Flexible Printed Circuit

“…IGZO can be given as one of the OS [4,5,6]. Although the formation of a singlecrystal IGZO thin film requires annealing at temperatures of greater than or equal to 1000 C, the formation of a CAAC-IGZO thin film over a glass substrate requires annealing at temperatures of less than or equal to 500 C. We succeeded in forming a channel-etched OS field-effect transistor that uses a CAAC-IGZO as an active layer and has improved characteristics and reliability by lowering the defect levels [7].…”