“…[4][5] In particular, CAAC-IGZO thin films have very low defect level density in the gap; therefore, field effect transistors (FET) with the CAAC-IGZO thin films as an active layer have good characteristics and reliability. In addition, because of the durability of the CAAC-IGZO to etching gas, it is possible to adopt a channel-etch process [6]. Furthermore, the CAAC-IGZO can be formed on a glass substrate at a relatively low temperature, under 500 ºC, unlike the case of single crystal IGZO [7][8] requiring high temperature, 1200 ºC or higher.…”