P‐13: The Relationship Between Crystallinity and Device Characteristics of In‐Sn‐Zn‐Oxide

Abstract

We have reported that the transistors having the c-axis-alignedcrystalline (CAAC) In-Ga-Zn-oxide show good performance. For In-Sn-Zn-oxide, we investigated relation between crystallinity and electrical properties. The experimental results suggest that In-Sn-Zn-oxide can have a layered structure like a CAAC structure, and their high crystallinity improves device performance.