33.1: Channel‐Etched C‐Axis Aligned Crystalline Oxide Semiconductor FET Using Cu Wiring

Abstract

A channel-etched IGZO field-effect transistor (FET) using Cu wiring was fabricated. Because little Cu is diffused into a c-axis aligned crystalline oxide semiconductor (CAAC-OS), which is c-axis aligned crystalline IGZO, the use of the CAAC-OS provides favorable characteristics for a channel-etched FET.

Fabrication of 8K4K organic EL panel using high-mobility IGZO material

“…In an OS‐FET, stability of a back channel is required. Employing the CAAC structure is a means of increasing stability, and we have therefore examined modifications of the CAAC structure to further increase the stability of the back channel . OS‐FETs are operated by the accumulation of electrons that are the major carriers.…”

P‐8: Analysis of Degradation Mechanism of Oxide Semiconductor FETs with High Tolerance to Intense NBTIS

“…Our research group previously reported on back-channel-etched (BCE) and top-gate self-aligned (TGSA) field-effect transistors (FETs) with oxide semiconductor (OS) active layers [1][2][3][4][5][6]. OSbased FET (OSFET) technologies have recently been widely applied.…”

9‐4: Fabrication of Oxide‐Semiconductor FETs with Submicron Channel Length

“…The authors previously developed OS FETs with back-channeletched (BCE) and top-gate self-aligned (TGSA) structures [1][2][3][4][5][6]. BCE OS FETs can be fabricated using fewer masks than those required for TGSA OS FETs.…”