A 13.3‐inch 8k4k 120‐Hz 12‐bit OLED display was constructed using top‐gate self‐align c‐axis aligned crystalline oxide semiconductor FETs in the backplane. Additionally, a 12‐bit source driver IC employing a digital‐to‐analog converter was fabricated.
To obtain a high-luminance active-matrix organic light-emitting diode (AMOLED) display compatible with the high-dynamicrange (HDR) technology, we investigated the effect of basic components, e.g., field-effect transistor, pixel circuit, OLED structure, and organic material. Combining these technologies, we fabricated a high-luminance display with a peak luminance exceeding 3,000 cd/m 2 .
We have fabricated top‐gate field‐effect transistors (FETs) based on an oxide semiconductor for high‐performance driving capability. The optimization of the plasma treatment enabled a 50‐nm‐thick gate insulating film and a short channel length of these FETs, enabling a high FET performance.
We have successfully fabricated an 8.34-inch 1058-ppi 8K x 4K flexible organic light-emitting diode (OLED) display. It exhibits the world's highest resolution and pixel density among flexible OLED displays, offering excellent viewing-angle characteristics owing to the arrangement of subpixels in a zigzag pattern.
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