76-3: Development of a Top-Gate Transistor with Short Channel Length and C-Axis-Aligned Crystalline Indium-Gallium-Zinc-Oxide for High-Resolution Panels

Abstract

We have fabricated top‐gate field‐effect transistors (FETs) based on an oxide semiconductor for high‐performance driving capability. The optimization of the plasma treatment enabled a 50‐nm‐thick gate insulating film and a short channel length of these FETs, enabling a high FET performance.

P‐8: Analysis of Degradation Mechanism of Oxide Semiconductor FETs with High Tolerance to Intense NBTIS

“…Our research group previously reported on back-channel-etched (BCE) and top-gate self-aligned (TGSA) field-effect transistors (FETs) with oxide semiconductor (OS) active layers [1][2][3][4][5][6]. OSbased FET (OSFET) technologies have recently been widely applied.…”

9‐4: Fabrication of Oxide‐Semiconductor FETs with Submicron Channel Length

“…The authors previously developed OS FETs with back-channeletched (BCE) and top-gate self-aligned (TGSA) structures [1][2][3][4][5][6]. BCE OS FETs can be fabricated using fewer masks than those required for TGSA OS FETs.…”

P‐4: Novel Oxide Semiconductors Enabling as High On‐State Current as LTPS

“…In the authors' previous study, high-mobility IGZO with In:Ga:Zn ratio = 4:2:3 (IGZO(4:2:3)) was prepared and high field-effect mobility and reliability were achieved using IGZO(4:2:3) [4][5][6][7]. Ito et al recently reported high-mobility IGZO with a Hall mobility of 50 cm 2 /Vs [8].…”