We have fabricated top‐gate field‐effect transistors (FETs) based on an oxide semiconductor for high‐performance driving capability. The optimization of the plasma treatment enabled a 50‐nm‐thick gate insulating film and a short channel length of these FETs, enabling a high FET performance.
A 4.3-inch 1058-ppi 4K liquid crystal display was fabricated using top-gate field-effect transistors (FETs) comprising a cloudaligned composite oxide semiconductor. For transparent pixels comprising an oxide semiconductor/oxide conductor (OS/OC), FETs, wirings, capacitors, and contacts in the pixels are transparent. This display achieves a 63.6 aperture ratio and low power consumption.
A channel-etched IGZO field-effect transistor (FET) using Cu wiring was fabricated. Because little Cu is diffused into a c-axis aligned crystalline oxide semiconductor (CAAC-OS), which is c-axis aligned crystalline IGZO, the use of the CAAC-OS provides favorable characteristics for a channel-etched FET.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.