Fabrication of 8K4K organic EL panel using high-mobility IGZO material

Okazaki, Kenichi; Shima, Yukinori; Kurosaki, Daisuke; Koezuka, Junichi; Kawashima, Susumu; Shiokawa, Masataka; Shishido, Hideaki; Yamazaki, Shunpei

doi:10.1002/jsid.396

Cited by 10 publications

(7 citation statements)

References 13 publications

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“…Our previous s having an In-rich of In:Ga:Zn 1 eliability [9,10] FET including a are stacked to damage during th FET including a ayer achieves a These reports s active layer havin 4.1 can possibl fabricated and ev ayer with the Instructure in whic…”

Section: Backgroumentioning

confidence: 99%

76‐2: Field‐Effect Transistor with CAAC/CAC‐OS Double‐Layer Structure for Diversion of Gen 8‐10.5 Amorphous Silicon Production Lines

Okazaki

Shima

Kurosaki

et al. 2017

Symp Digest of Tech Papers

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Using an active layer in which a c‐axis‐aligned crystalline oxide semiconductor (CAAC‐OS) is stacked on a cloud‐aligned composite OS (CAC‐OS), we have succeeded in fabricating a channel‐etched field‐effect transistor (CE‐FET) with a high on‐state current and favorable reliability. The CE‐FET with the CAAC/CAC‐OS structure can be fabricated using the existing amorphous silicon facilities and processes almost as they are. Therefore, we believe that high‐performance devices can be fabricated at low cost with large Gen 8‐10.5 glass substrates.

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Section: Backgroumentioning

confidence: 99%

76‐2: Field‐Effect Transistor with CAAC/CAC‐OS Double‐Layer Structure for Diversion of Gen 8‐10.5 Amorphous Silicon Production Lines

Okazaki

Shima

Kurosaki

et al. 2017

Symp Digest of Tech Papers

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“…Hence, there are only a few mass production factories of large panel. In contrast, a lot of studies have reported about improving photo‐stability, such as c‐axis‐aligned crystal‐indium gallium zinc oxide and dual gate …”

Section: Introductionmentioning

confidence: 98%

Novel LTPS technology for large substrate

et al. 2016

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We developed partial laser anneal silicon (PLAS) thin‐film transistor (TFT) of novel low‐temperature polycrystalline‐silicon (LTPS) technology, which had the mobility of 28.1 cm2/Vs lager than that of mass produced oxide TFT and photo‐stability comparable with that of LTPS TFT in bottom gate structure. This innovative technology enables the conversion from an α‐Si TFT to a high‐mobility TFT most easily and inexpensively. Moreover, there is no limit of substrate size, such as Gen10 and more. Photo‐stability of PLAS will be suitable to organic light‐emitting diode backplane, high‐dynamic range TV, and outdoor IDP.

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“…In the authors' previous study, high-mobility IGZO with In:Ga:Zn ratio = 4:2:3 (IGZO(4:2:3)) was prepared and high field-effect mobility and reliability were achieved using IGZO(4:2:3) [4][5][6][7]. Ito et al recently reported high-mobility IGZO with a Hall mobility of 50 cm 2 /Vs [8].…”

Section: Introductionmentioning

confidence: 99%