Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator

Sarma, Ranjit; Saikia, Dhrubajyoti; Saikia, P. K.; Baishya, Bikash

doi:10.1590/s0103-97332010000300019

Cited by 25 publications

(11 citation statements)

References 20 publications

(25 reference statements)

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“…Sarma et al reported thermally evaporated amorphous Nd 2 O 3 films using Nd 2 O 3 powder as the source. 111 The 65 nm thick films have a capacitance of 160 nF cm −2 , corresponding to a dielectric constant of 11.7. However, the leakage current is relatively high, reaching 1 × 10 −4 A•cm −2 at 1 MV cm −1 .…”

Section: Chemical Reviewsmentioning

confidence: 99%

“…The resulting 94 nm thick films are very smooth (σ RMS = 0.8 nm) and exhibit a dielectric constant of 10.5 and a breakdown field strength of approximately 1.3 MV cm –1 . Sarma et al reported thermally evaporated amorphous Nd 2 O 3 films using Nd 2 O 3 powder as the source . The 65 nm thick films have a capacitance of 160 nF cm –2 , corresponding to a dielectric constant of 11.7.…”

Section: High-k Dielectric Materialsmentioning

confidence: 99%

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High-k Gate Dielectrics for Emerging Flexible and Stretchable Electronics

et al. 2018

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Recent advances in flexible and stretchable electronics (FSE), a technology diverging from the conventional rigid silicon technology, have stimulated fundamental scientific and technological research efforts. FSE aims at enabling disruptive applications such as flexible displays, wearable sensors, printed RFID tags on packaging, electronics on skin/organs, and Internet-of-things as well as possibly reducing the cost of electronic device fabrication. Thus, the key materials components of electronics, the semiconductor, the dielectric, and the conductor as well as the passive (substrate, planarization, passivation, and encapsulation layers) must exhibit electrical performance and mechanical properties compatible with FSE components and products. In this review, we summarize and analyze recent advances in materials concepts as well as in thin-film fabrication techniques for high- k (or high-capacitance) gate dielectrics when integrated with FSE-compatible semiconductors such as organics, metal oxides, quantum dot arrays, carbon nanotubes, graphene, and other 2D semiconductors. Since thin-film transistors (TFTs) are the key enablers of FSE devices, we discuss TFT structures and operation mechanisms after a discussion on the needs and general requirements of gate dielectrics. Also, the advantages of high- k dielectrics over low- k ones in TFT applications were elaborated. Next, after presenting the design and properties of high- k polymers and inorganic, electrolyte, and hybrid dielectric families, we focus on the most important fabrication methodologies for their deposition as TFT gate dielectric thin films. Furthermore, we provide a detailed summary of recent progress in performance of FSE TFTs based on these high- k dielectrics, focusing primarily on emerging semiconductor types. Finally, we conclude with an outlook and challenges section.

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Section: Chemical Reviewsmentioning

confidence: 99%

Section: High-k Dielectric Materialsmentioning

confidence: 99%

High-k Gate Dielectrics for Emerging Flexible and Stretchable Electronics

et al. 2018

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“…Neodymium oxide (Nd 2 O 3 ) , one of the lanthanide oxides, has been found to be a promising high‐k material to replace SiO 2 to reduce the operating voltage of OTFTs, but like the much more expensive La 2 O 3 , it suffers from high hygroscopicity, easily forming hydroxide in the air . Therefore, hybrid high‐k materials based on Nd 2 O 3 have been recently explored and shown promising potential as gate dielectric . On the other hand, niobium oxide (Nb 2 O 5 ) has a higher dielectric constant (≈29) than Nd 2 O 3 (≈20) .…”

Section: Introductionmentioning

confidence: 99%

High‐Performance Pentacene Organic Thin‐Film Transistor by Using Nd₂O₃ Gate Dielectric Doped with Nb

Tang

Han

et al. 2018

Physica Status Solidi (a)

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Pentacene organic thin-film transistors (OTFTs) using high-k Nd x Nb (1Àx) O gate dielectric with different Nb contents (x ¼ 1, 0.950, 0.908, and 0.877) are fabricated. The best OTFT has x ¼ 0.950, achieving a high carrier mobility of 1.95 cm 2 V À1 s À1 , small threshold voltage of À1.57 V, small sub-threshold swing of 0.13 V dec À1 , and small hysteresis of 0.13 V. Atomic force microscopy and X-ray photoelectron spectroscopy measurements reveal that the Nb doping can suppress the hygroscopicity of Nd oxide to produce a smoother dielectric surface, on which larger pentacene grains are grown to result in higher carrier mobility. The hysteresis of the OTFTs is attributed to donor-like traps associated with the hydroxide formed in Nd 2 O 3 after absorbing moisture and also acceptor-like traps (in the form of oxygen vacancies) induced by Nb incorporation.

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“…Fig. 6 also shows that LaZrO and LaNbO have better leakage current property than the high-κ gate dielectrics of pentacene OTFTs in the literature (e.g., HfLaO [16], HfSiO x [33], BZN [34], Nd 2 O 3 [35], and Ta 2 O 5 [36]), indicating that La-doped ZrO 2 and La-doped Nb 2 O 5 with low leakage current density are promising gate dielectrics for OTFT. Moreover, LaZrO shows a leakage current density comparable to that of Mn-doped barium strontium titanate (BST) [37], Pulsed Laser Deposition (PLD) Al 2 O 3 and LaAlO [38], ALD Al 2 O 3 [39] and HfO 2 [40].…”

Section: E Effect Of La Incorporation On the Leakage Current Of The mentioning

confidence: 84%

A Study on La Incorporation in Transition-Metal (Y, Zr, and Nb) Oxides as Gate Dielectric of Pentacene Organic Thin-Film Transistor

Han

Tang

Leung

et al. 2015

IEEE Trans. Electron Devices

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The effects of La incorporation in three transitionmetal (TM = Y, Zr, and Nb) oxides as gate dielectric of pentacene organic thin-film transistor (OTFT) have been investigated. La incorporated in Zr oxide and Nb oxide greatly decreases their trap density (as confirmed by low-frequency noise measurement) by passivating their oxygen vacancies, resulting in larger pentacene grains grown on them (as shown by atomic force microscopy) and thus higher carrier mobility for the OTFT due to less grain-boundary scattering. The carrier mobility of the ZrLaO-and NbLaO-OTFTs is about 70 times and 300 times higher than that of their counterparts based on ZrO 2 and Nb 2 O 5 , respectively. However, La incorporated in Y 2 O 3 increases its trap density by roughening its surface, causing smaller pentacene grains grown and thus lower carrier mobility. On the other hand, all the three TM elements incorporated in La 2 O 3 can result in more moisture-resistant gate dielectric with smoother surface, resulting in larger pentacene grains grown and thus higher carrier mobility for the OTFT.Index Terms-High-κ gate dielectric, La incorporation, low-frequency noise (LFN), organic thin-film transistor (OTFT), transition-metal (TM) oxides.

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Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator

Cited by 25 publications

References 20 publications

High-k Gate Dielectrics for Emerging Flexible and Stretchable Electronics

High-k Gate Dielectrics for Emerging Flexible and Stretchable Electronics

High‐Performance Pentacene Organic Thin‐Film Transistor by Using Nd₂O₃ Gate Dielectric Doped with Nb

A Study on La Incorporation in Transition-Metal (Y, Zr, and Nb) Oxides as Gate Dielectric of Pentacene Organic Thin-Film Transistor

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Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator

Cited by 25 publications

References 20 publications

High-k Gate Dielectrics for Emerging Flexible and Stretchable Electronics

High-k Gate Dielectrics for Emerging Flexible and Stretchable Electronics

High‐Performance Pentacene Organic Thin‐Film Transistor by Using Nd2O3 Gate Dielectric Doped with Nb

A Study on La Incorporation in Transition-Metal (Y, Zr, and Nb) Oxides as Gate Dielectric of Pentacene Organic Thin-Film Transistor

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High‐Performance Pentacene Organic Thin‐Film Transistor by Using Nd₂O₃ Gate Dielectric Doped with Nb