Articles you may be interested inIon-surface interactions in low temperature silicon epitaxy by remote plasma enhanced chemical-vapor deposition J.Low temperature deposition of silicon nitride films by distributed electron cyclotron resonance plasmaenhanced chemical vapor deposition J. Vac. Sci. Technol. A 13, 2900 (1995); 10.1116/1.579609 Chemical vapor deposition of aluminum from dimethylaluminumhydride (DMAH): Characteristics of DMAH vaporization and Al growth kineticsNearly stoichiometric aluminum and gallium nitride thin films were prepared from hexakis͑dimethylamido͒dimetal complexes, M 2 ͓N͑CH 3 ) 2 ] 6 ͑MϭAl,Ga͒, and ammonia at substrate temperatures as low as 200°C by using low pressure thermal and plasma enhanced chemical vapor deposition ͑CVD͒. Both processes gave films that showed little or no carbon (Ͻ5 at. %͒ and no oxygen (Ͻfew at. %͒ contamination, but in all cases there was hydrogen incorporation. The films were highly transparent in the ultraviolet and visible regions. The barrier properties of the aluminum nitride films in a Si/AlN/Au metallization scheme were examined by using backscattering spectrometry. The growth rate of the aluminum nitride films was as high as 1300 Å /min. Overall, the results suggest that M 2 ͓N͑CH 3 ) 2 ] 6 ͑MϭAl,Ga͒ are promising precursors for low-temperature/ low-pressure thermal and plasma-enhanced CVD of group III nitride thin films.

Nearly stoichiometric silicon, germanium, and tin nitride thin films were deposited from the corresponding homoleptic dimethylamido complexes M ͑NMe 2 ͒ 4 ͑MϭSi, Ge, Sn; MeϭCH 3 ͒, and an ammonia plasma at low substrate temperatures ͑Ͻ400°C͒. Tin nitride films were also deposited from Sn ͑NMe 2 ͒ 4 and ammonia without plasma activation. The films showed little ͑Ͻfew at. %͒ or no carbon or oxygen contamination. The barrier properties of the silicon and germanium nitride films were evaluated by using backscattering spectrometry. Homoleptic dimethylamido silicon and germanium compounds are attractive alternatives to silane and germane for use in the plasma-enhanced chemical vapor deposition of nitride thin films.

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