Chemical vapor deposition of aluminum and gallium nitride thin films from metalorganic precursors

Abstract

Articles you may be interested inIon-surface interactions in low temperature silicon epitaxy by remote plasma enhanced chemical-vapor deposition J.Low temperature deposition of silicon nitride films by distributed electron cyclotron resonance plasmaenhanced chemical vapor deposition J. Vac. Sci. Technol. A 13, 2900 (1995); 10.1116/1.579609 Chemical vapor deposition of aluminum from dimethylaluminumhydride (DMAH): Characteristics of DMAH vaporization and Al growth kineticsNearly stoichiometric aluminum and gallium nitride thin films were prepared from hexakis͑dimethylamido͒dimetal complexes, M 2 ͓N͑CH 3 ) 2 ] 6 ͑MϭAl,Ga͒, and ammonia at substrate temperatures as low as 200°C by using low pressure thermal and plasma enhanced chemical vapor deposition ͑CVD͒. Both processes gave films that showed little or no carbon (Ͻ5 at. %͒ and no oxygen (Ͻfew at. %͒ contamination, but in all cases there was hydrogen incorporation. The films were highly transparent in the ultraviolet and visible regions. The barrier properties of the aluminum nitride films in a Si/AlN/Au metallization scheme were examined by using backscattering spectrometry. The growth rate of the aluminum nitride films was as high as 1300 Å /min. Overall, the results suggest that M 2 ͓N͑CH 3 ) 2 ] 6 ͑MϭAl,Ga͒ are promising precursors for low-temperature/ low-pressure thermal and plasma-enhanced CVD of group III nitride thin films.

Optical characterization of sputtered amorphous aluminum nitride thin films by spectroscopic ellipsometry

“…Aluminum nitride (AlN) has received increasing attention from the material research community due to its unique properties [1,2] which make AlN films promising materials not only for applications in optoelectronics and microelectronic devices [3,4], but also for surface passivation of semiconductors and insulators, and in surface acoustic wave device applications [5,6]. Another major interest in this insulator stems from its ability to form alloys with the group III nitrides such as AlGaN [7] and AlGaInN [8], allowing the fabrication of AlGaN/GaN based electronic and optical device applications.…”

Epitaxial GaN using Ga(NMe2)3 and NH3 Plasma by Atomic Layer Deposition

“…Notably, all previous reports using 1 has resulted in amorphous films at all deposition temperatures. 19,21,22 We show that 1 displayed self-limiting behaviour in a temperature range from 130-250  C on Si(100). Deposition of GaN on 4H-SiC(0001) rendered epitaxial films with near stochiometric composition and very low impurity levels of carbon and oxygen.…”

“…Herein, we report low temperature deposition of GaN using tris(dimethylamido)gallium(III), (Ga(N(CH3)2)3 1, with NH3 plasma by ALD. Precursor 1 has been previously used for ALD of Ga2O3 19,20 and Ga2S3 21 and CVD of GaN 22 , but not for ALD of GaN. Notably, all previous reports using 1 has resulted in amorphous films at all deposition temperatures.…”

Materials Chemistry of Group 13 Nitrides

“…This again shows the importance of the flow characteristics and the deposition conditions. The amide [Ga(NMe 2 ) 3 ] 2 only gave GaN films in the presence of additional ammonia; however, very high growth rates of 100-150 nm min -1 were found at impressively low temperatures of 100-400 • C [114].…”