Optical characterization of sputtered amorphous aluminum nitride thin films by spectroscopic ellipsometry

Khoshman, Jebreel M.; Kordesch, Martin E.

doi:10.1016/j.jnoncrysol.2005.08.009

Cited by 74 publications

(47 citation statements)

References 23 publications

(23 reference statements)

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“…where A n , B n , C n , A k and B k are model parameters [32]. For the samples having depolarization effect, the incident angle is an important factor.…”

Section: Resultsmentioning

confidence: 99%

Deposition and Ellipsometric Characterization of Transparent Conductive Al-doped ZnO for Solar Cell Application

Gençyılmaz¹,

Atay²,

Akyüz³

2015

JOCET

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Abstract-In this work, aluminum doped ZnO (AZO) thin films doped with different aluminum concentration (0%, 1%, 2%, 3%, 4%, 5%) were grown onto glass substrates by ultrasonic spray pyrolysis technique. Spectroscopic ellipsometeric studies of the AZO thin films were determined by means of spectroscopic ellipsometry and Cauchy-Urbach dispersion model were used to determined extract the thickness and the optical constants (refractive index and extinction coefficient) of AZO thin films. The transmittance, absorbance and reflectance spectra of the films were investigated by using UV-vis Spectrophotometer. The optical band gap of all the films were determined by the measurement of the optical absorbance as a function of wavelength and found to be between 3.22-3.27 eV. Also, surface image and roughness values and electrical resistivity values of AZO thin films were investigated at room temperature by using atomic force microscopy and four-point probe set-up, respectively. According to results, due to good optical, electrical and surface properties of AZO thin films, these films are promising candidates for their use as transparent electrodes in solar cells application.Index Terms-ZnO thin film, solar cell, spectroscopic ellipsometry, sprays pyrolysis. I. INTRODUCTIONZnO has many inherent advantages such as high conductivity, transparency, wide optical band gap and large exciton binding energy. ZnO has practical benefits that make it on attractive material due to these advantages. It is applied for a variety of important applications e.g. as transparent electrodes and windows materials in solar cells, photodiodes, gas sensors and UV-light emission diode and more [1]- [5]. Undoped ZnO thin films have usually shown n-type conduction and a low resistivity due to oxygen vacancies and zinc intersititials [6]. Also, many researches have been made to reach low resistivity by doping with group-III elements such as aluminum [7] In this paper, the AZO thin films were prepared on glass substrates by ultrasonic spray pyrolysis technique at various Al concentrations and investigate the effect of Al concentration on optical, electrical, surface properties and ellipsometric characterization of these films. II. EXPERIMENTAL DETAILSZnO thin films of various Al doped concentrations (0%, 1%, 2%, 3%, 4%, 5%) were deposited at 350 ± 5°C by ultrasonic spray pyrolysis. The ultrasonic oscillator frequency was 100 kHz, and the droplet size was 20 m. The substrate temperature was measured using an iron-constantan thermocouple. The nozzle substrate separation used was 30 cm. The spray solution was prepared to 0.1 M zinc acetate [Zn (CH 3 COO) 2 .2H 2 O] and 0.1 M aluminum chloride hexahydrate [AlCl 3 .6H 2 O] in a mixture of methyl alcohol and de-ionised water in a volumetric proportion of 1:3 ml. The starting spraying solution was mixed with a magnetic mixer to prevent sedimentation. The solution flow rate was kept at 5 ml min -1 and controlled by a followmeter. Totally, 100 ml of solution was used and sprayed for 20 min. Al doped ZnO thin film...

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“…where A n , B n , C n , A k and B k are model parameters [32]. For the samples having depolarization effect, the incident angle is an important factor.…”

Section: Resultsmentioning

confidence: 99%

Deposition and Ellipsometric Characterization of Transparent Conductive Al-doped ZnO for Solar Cell Application

Gençyılmaz¹,

Atay²,

Akyüz³

2015

JOCET

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“…Therefore, in the Al-N system thin film with the highly optical absorption and conductivity nature, which was deposited on the nitrogen flow ratio of 16.7%, it is found that there is structural change, from the crystalline aluminum states to the amorphous states including Al-N bond. In general, the AlN thin films are transparent (wideband gap) insulating films [10], [11]. Therefore, it is likely that the amorphous AlN including the fine AlN microcrystalline textures contribute markedly to the optical absorption.…”

Section: Structural Properties Of Al-n System Thin Filmmentioning

confidence: 99%

Al-Based Metal Mesh Electrodes for Advanced Touch Screen Panels Using Aluminum Nitride System Optical Absorption Layer

Ochi

Shida

Okuno³

et al. 2015

IEICE Trans. Electron.

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SUMMARYAn Al-N system optical absorption layer has been developed, to be used for Al-based metal mesh electrodes on touch screen panels. The triple-layered electrode effectively suppresses the optical reflection in both visible light and the blue color region and exhibits excellent wet etching property that accommodates micro-fabrication. Due to its high noise immunity and contact sensitivity originating from its low electrical resistivity, the proposed metal mesh electrodes are useful for touch-sensitive panels in the next generation ultra-high-resolution displays. key words: touch screen panel, metal mesh electrode, projected capacitive, invisible, etching property

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“…Since the CdS thin films were optically transparent in the spectral region of interest the Cauchy-Urbach (CU) dispersion model was then applied to model this region. The use of this model for transparent material was reported elsewhere [10].…”

Section: Optical Studiesmentioning

confidence: 99%

The influence of annealing temperature on some physical properties of spray deposited nanostructured CdS thin films

Gençyılmaz¹,

Atay²,

Akyüz³

2015

CSJ

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Absract. In this study, the effect of annealing temperature on physical properties of CdS thin films was studied. CdS in the form of thin film was prepared by a simple and inexpensive spray pyrolysis technique for various annealing temperatures. After deposition, films were annealed at 400-450-500 °C for 2 hours at air atmosphere. The effects of the annealing temperature on the physical properties of the films were investigated by studying the transmittance measurements, spectroscopic ellipsometry technique, atomic force microscope (AFM) observations and the four probe technique. The transmittance measurements were used to estimate the band gap energy by the linear fit of (h) 2 curve. The band gap energy was found to be slightly decreasing with the annealing process. From the four probe measurement the resistivity was determined and found to be strongly decreasing with increasing the annealing temperature. Finally, annealing process and annealing temperature confirmed significant effects on the optical, electrical and surface properties CdS thin films.

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Optical characterization of sputtered amorphous aluminum nitride thin films by spectroscopic ellipsometry

Cited by 74 publications

References 23 publications

Deposition and Ellipsometric Characterization of Transparent Conductive Al-doped ZnO for Solar Cell Application

Deposition and Ellipsometric Characterization of Transparent Conductive Al-doped ZnO for Solar Cell Application

Al-Based Metal Mesh Electrodes for Advanced Touch Screen Panels Using Aluminum Nitride System Optical Absorption Layer

The influence of annealing temperature on some physical properties of spray deposited nanostructured CdS thin films

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