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The dielectric capacitors, which has the characteristics of greater power density, have received extensive research attention due to its application prospects of pulsed power devices. Film capacitors are easier to...

When materials’ characteristic dimensions are reduced to the nanoscale regime, their mechanical properties will vary significantly to that of their bulk counterparts.

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We report the implementation of ion-cut silicon-on-insulator (SOI) wafer fabrication technique with plasma immersion ion implantation (PIII). The hydrogen implantation rate, which is independent of the wafer size, is considerably higher than that of conventional implantation. The simple PIII reactor setup and its compatibility with cluster-tools offer other ion-cut process optimization opportunities. The feasibility of the PIII ion-cut process is demonstrated by successful fabrication of SOI structures. The hydrogen plasma can be optimized so that only one ion species is dominant. The feasibility of performing ion-cut using helium PIII is also demonstrated.

Recovery of the carrier density in arsenic-doped silicon after high energy (2 MeV) Si + implantation J. Appl. Phys. 95, 6092 (2004); 10.1063/1.1713044Hydrogen-induced surface blistering of sample chuck materials in hydrogen plasma immersion ion implantation Alpha-elastic recoil detection analysis of the energy distribution of oxygen ions implanted into silicon with plasma immersion ion implantation