Ion-cut silicon-on-insulator fabrication with plasma immersion ion implantation

Lü, Xiang; Iyer, S. Sundar Kumar; Hu, Chenming; Cheung, N.W.; Min, Junhong; Fan, Zhengjie; Chu, Paul K.

doi:10.1063/1.120127

Cited by 43 publications

(15 citation statements)

References 8 publications

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“…As conventional implanters are not adapted to very low ion energies, implantation of doping elements via PBII processing with a collisional sheath is becoming a useful tool for shallow implantation. Plasma doping (or PLAD) thus constitutes, by far, the most important application of PBII in microelectronics [10,21,23,[126][127][128][129][130][131][132][133][134], along with the production of SOI (silicon on insulator) wafers with the smart-cut process [135][136][137][138].…”

Section: Plasma Dopingmentioning

confidence: 99%

Plasma-based ion implantation and deposition: a review of physics, technology, and applications

Pelletier

Anders

2005

IEEE Trans. Plasma Sci.

169

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After pioneering work in the 1980s, plasma-based ion implantation (PBII) and plasma-based ion implantation and deposition (PBIID) can now be considered mature technologies for surface modification and thin film deposition. This review starts by looking at the historical development and recalling the basic ideas of PBII. Advantages and disadvantages are compared to conventional ion beam implantation and physical vapor deposition for PBII and PBIID, respectively, followed by a summary of the physics of sheath dynamics, plasma and pulse specifications, plasma diagnostics, and process modelling. The review moves on to technology considerations for plasma sources and process reactors. PBII surface modification and PBIID coatings are applied in a wide range of situations. They include the by-now traditional tribological applications of reducing wear and corrosion through the formation of hard, tough, smooth, low-friction and chemically inert phases and coatings, e.g. for engine components. PBII has become viable for the formation of shallow junctions and other applications in microelectronics. More recently, the rapidly growing field of biomaterial synthesis makes used 1 of PBII&D to produce surgical implants, bio-and blood-compatible surfaces and coatings, etc.With limitations, also non-conducting materials such as plastic sheets can be treated. The major interest in PBII processing originates from its flexibility in ion energy (from a few eV up to about 100 keV), and the capability to efficiently treat, or deposit on, large areas, and (within limits) to process non-flat, three-dimensional workpieces, including forming and modifying metastable phases and nanostructures.We use the acronym PBII&D when referring to both implantation and deposition, while PBIID implies that deposition is part of the process.2

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Section: Plasma Dopingmentioning

confidence: 99%

Plasma-based ion implantation and deposition: a review of physics, technology, and applications

Pelletier

Anders

2005

IEEE Trans. Plasma Sci.

169

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“…The thin film transfer can be used to fabrication of nano-scale single crystalline silicon thin film [2]. The most well-known thin film transfer technique is the Smart-Cut R [3] or Ion-Cut R [4] process. The Smart-Cut can transfer silicon thin film to another silicon wafer by the processes of implanting hydrogen ion in the desired depth of the silicon wafer, wafer bonding, thermal annealing treatment and ion implantation layer splitting.…”

Section: Introductionmentioning

confidence: 99%

Thermal Stress Induced Thin Film Transfer from Single-crystal Silicon Layer on Sapphire Substrate

Hsu

et al. 2013

Integrated Ferroelectrics

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Silicon-on-sapphire (SOS) is a member of the silicon-on-insulator (SOI) family which uses a hetero-epitaxial process to generate thin films of semiconductor materials. SOS has become an attractive technology for low-power and radio-frequency integrated circuits. This study tends to apply SOS to thin film solar cell by thin film transfer technique. The nano-scale silicon thin film can be generated on the high quality sapphire substrate to form SOS. SOS is soaked in the special H + -chemical solution at first. The aluminum layer is bonded by thermal annealing treatment and the silicon thin film will transfer to the aluminum layer with cooling slowly due to the thermal stress induced. Through the special H + chemical treatment and the annealing process, the SOS can be transferred to Si/Al layer and sapphire layer successfully. The Si/Al layer can be applied to thin film solar cell or other nano-size devices. The sapphire layer can be recycle for the SOS use.

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“…[1][2][3][4][5][6] However, one major drawback in conventional pulse-mode PIII is that the implanted ions tend to have a broad energy distribution which may affect the yield of the separation by plasma implantation of oxygen ͑SPIMOX͒ and hydrogen ion-cut processes. 7,8 The use of a long voltage pulse duration has been shown to reduce this energy spread.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of implantation efficiency by grid biasing in radio-frequency inductively coupled plasma direct-current plasma immersion ion implantation

Tong

Zeng

et al. 2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Direct-current plasma immersion ion implantation (dc-PIII) is an emerging method for the treatment of planar samples and particularly attractive as an efficient and economical technique to fabricate silicon-on-insulator. In this article, we report the use of grid biasing to enhance the implantation efficiency such as implantation current density. Experiments in argon plasma show that the implantation current density varies with the biased voltage (Vg), is higher at Vg⩾+30 V or Vg⩽−40 V than at Vg=0, and is saturated at Vg⩾+50 V or Vg⩽−50 V at a pressure of 0.2 mTorr. The implantation current density is always higher at Vg=+50 V than at Vg=0 at different pressure and radio-frequency (rf) power. Moreover, the implantation current density increases with the rf power and pressure at both 0 and +50 V biasing. The results of our particle-in-cell simulation and global model show that the observed phenomenon is partly due to the variation of the plasma density with the bias, and the variation in the shape of emitted plasma surface with the bias is clearly illustrated by our experimental results. Similar results are observed for hydrogen plasma.

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Ion-cut silicon-on-insulator fabrication with plasma immersion ion implantation

Cited by 43 publications

References 8 publications

Plasma-based ion implantation and deposition: a review of physics, technology, and applications

Plasma-based ion implantation and deposition: a review of physics, technology, and applications

Thermal Stress Induced Thin Film Transfer from Single-crystal Silicon Layer on Sapphire Substrate

Enhancement of implantation efficiency by grid biasing in radio-frequency inductively coupled plasma direct-current plasma immersion ion implantation

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