Nanoporous anodized tin oxide films have many potential applications in the fields of photocatalysis, sensors and electrode materials. In this paper, we found that potential played a dominant role in the morphological evolution of anodized tin oxide films in electrolyte containing F− and S2−. The critical potential for the formation of nanoporous structure was determined. Porous anodized tin oxide films with different nanostructure can be prepared by the application of low anodization potential and high anodization potential. The I–V curve analysis showed that the change of the nanoporous of tin oxide films at different potentials could be attributed to the oxygen which generated by the electronic current. The valence regulation of Sn element in anodized tin oxide film can be achieved by controlling the potential.
In this paper, in order to explore the effect of the preferential orientation of Cu on the preparation of robust anodized Cu2O films, three types of Cu substrates with three different preferential crystal plane orientation [(111), (200), (220)] are employed. First‐Principles calculation is employed to calculate the surface energy of different Cu crystalline planes by the software of DACAPO, which is conducted by the plane‐wave pseudo‐potential method. The influence of the preferential plane orientation of Cu on the anodized oxidation reaction process and the morphology of anodized CuxO films has been discussed in detail. The results indicate that the morphology of anodized CuxO films depends on the preferential exposing plane orientation of Cu substrates under the same anodized oxidation condition. The high surface energy of Cu makes Cu atoms release more easily from lattices, leading to more different active‐reaction sites.
In
this study, electrodeposition combined with anodization was
employed to prepare a nanoporous tin oxide film on a pure copper substrate.
It was found that annealing temperature played a critically significant
role in regulating the crystallinity, pore size, and contents of different
oxidation states of the anodized tin oxide film to affect the electrochemical
performance. The study verified that SnO
x
films treated by optimized annealing at 500 °C with precisely
controlling the nanoporous morphology and crystallinity displayed
competitive specific capacitance at an appropriate ratio of Sn4+ to Sn2+. A maximum specific capacitance of 86.2
mF/cm2 could be achieved at this temperature, and the capacitance
retention rate still exceeded 90% even after 8000 charge–discharge
cycles. With properly designed annealing treatment, we implemented
tin film anodization to obtain an optimized electrode with significantly
enhanced electrochemical performance, which shows a promising application
in the electrochemical field to prepare electrodes.
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