Organic–inorganic hybrid perovskite (OIHP) photodetectors have presented unprecedented device performance mainly owing to outstanding material properties. However, the solution‐processed OIHP polycrystalline thin films with defective surface and grain boundaries always impair the key parameter of photodetectors. Herein, a nonfullerene passivation layer exhibits more efficient passivation for OIHP materials to dramatically reduce the trap density of state, yielding a dark current as low as 2.6 × 10−8 A cm−2 under −0.1 V. In addition, the strong absorption in near‐infrared (NIR) region of nonfullerene/C60 heterojunction broadens the detectable range to over 900 nm by effective charge transport, ultimately leading to a specific detectivity of 1.45 × 1012 and 7.37 × 1011 cm Hz1/2 W−1 at 650 and 820 nm, respectively. Encouragingly, the response speed of 27 ns is obtained at 0.6 mm2 of device area by removing constrain from the resistance–capacitance constant. Moreover, the prominent practical application of the photodetector is demonstrated in a weak light detection circuit and a visible light communication system. It is believed that the OIHP photodetectors with high sensitivity, NIR photoresponse, and ultrafast speed would pave the way to commercial applications.

Tin(Sn)‐based perovskite is currently considered one of the most promising materials due to extending the absorption spectrum and reducing the use of lead (Pb). However, Sn2+ is easily oxidized to Sn4+ in atmosphere, causing more defects and degradation of perovskite materials. Herein, double‐sided interface engineering is proposed, that is, Sn‐Pb perovskite films are sandwiched between the phenethylammonium iodide (PEAI) in both the bottom and top sides. The larger organic cations of PEA+ are arranged into a perovskite surface lattice to form a 2D capping layer, which can effectively prevent the water and oxygen to destroy bulk perovskite. Meanwhile, the PEA+ can also passivate defects of iodide anions at the bottom of perovskite films, which is always present but rarely considered previously. Compared to one sided passivation, Sn‐Pb hybrid perovskite photodetectors contribute a significant enhancement of performance and stability, yielding a broadband response of 300–1050 nm, a low dark current density of 1.25 × 10–3 mA cm–2 at –0.1 V, fast response speed of 35 ns, and stability beyond 240 h. Furthermore, the Sn‐Pb broadband photodetectors are integrated in an infrared up‐conversion system, converting near‐infrared light into visible light. It is believed that a double‐sided passivation method can provide new strategies to achieving high‐performance perovskite photodetectors.

In the last decade, optoelectronic devices based on organic‐inorganic hybrid perovskite (OIHP) materials, which have unique advantages of direct bandgap, large absorption coefficient, low density of defects, long charge carrier lifetime, diffusion length, and solution processability, have traveled with traditional inorganic semiconductor devices. The state‐of‐the‐art OIHP photodetectors have contributed a comparable performance with Si and III‐V compound semiconductor based photodetectors. Large amount of efforts have been focused on improving sensitivity, broadening detection spectra, enlarging linear dynamic range. However, few reports emphasized the important parameter of response speed. In this review, we summarize the progress and applications of OIHP photodetectors with fast response. Based on photovoltaic and photoconductive‐type OIHP photodetectors, the working principle and key factors on determining response speed are systematically mentioned. Then, the research progress of response speed, which is composed of resistance‐capacitance (RC) time constant and charge carrier transit time is discussed in detail. Subsequently, considering the intrinsic flexibility of perovskite materials, we briefly discuss the flexible photodetectors. Finally, an outlook and potential rules for designing fast‐response OIHP photodetectors are further proposed.

Dedicated multi-project wafer (MPW) runs for photonic integrated circuits (PICs) from Si foundries mean that researchers and small-to-medium enterprises (SMEs) can now afford to design and fabricate Si photonic chips. While these bare Si-PICs are adequate for testing new device and circuit designs on a probe-station, they cannot be developed into prototype devices, or tested outside of the laboratory, without first packaging them into a durable module. Photonic packaging of PICs is significantly more challenging, and currently orders of magnitude more expensive, than electronic packaging, because it calls for robust micron-level alignment of optical components, precise real-time temperature control, and often a high degree of vertical and horizontal electrical integration. Photonic packaging is perhaps the most significant bottleneck in the development of commercially relevant integrated photonic devices. This article describes how the key optical, electrical, and thermal requirements of Si-PIC packaging can be met, and what further progress is needed before industrial scale-up can be achieved.

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Organic ammonium salts have been widely used for defect passivation to suppress nonradiative charge recombination in perovskite solar cells (PSCs). However, they are prone to form undesirable in-plane favored 2D perovskites with poor charge transport capability that hamper device performance. Herein, the defects passivation role of alkyldiammonium including 1.6-hexamethylenediamine dihydriodide (HDAI 2 ), 1,3-propanediamine dihydriodide (PDAI 2 ), and 1.4-butanediamine dihydriodide (BDAI 2 ) for formamidiniumcesium perovskite is systematically investigated. With help of density functional theory (DFT) calculations, BDA with suitable size can synergistically passivate two defect sites on perovskite surfaces, showing the best defect passivation effect among the above three alkyldiammonium salts. Perovskite films based on BDAI 2 modification are found to keep the 3D perovskite phase with considerably reduced trap-state density, and enhanced carrier extraction. As a result, the BDAI 2 -modified devices deliver impressive efficiencies of 23.1% and 20.9% for inverted PSCs on the rigid and flexible substrates, respectively. Moreover, the corresponding encapsulated rigid devices maintain 92% of the initial efficiency after operating under continuous 1-sun illumination with the maximum power point tracking for 1000 h. Furthermore, the mechanical flexibility of the BDAI 2 -modified flexible device is also improved due to the release of residual stress.

In this article we describe a cost-effective approach for hybrid laser integration, in which vertical cavity surface emitting lasers (VCSELs) are passively-aligned and flip-chip bonded to a Si photonic integrated circuit (PIC), with a tilt-angle optimized for optical-insertion into standard grating-couplers. A tilt-angle of 10° is achieved by controlling the reflow of the solder ball deposition used for the electrical-contacting and mechanical-bonding of the VCSEL to the PIC. After flip-chip integration, the VCSEL-to-PIC insertion loss is -11.8 dB, indicating an excess coupling penalty of -5.9 dB, compared to Fibre-to-PIC coupling. Finite difference time domain simulations indicate that the penalty arises from the relatively poor match between the VCSEL mode and the grating-coupler.

The deployment of photonic integrated circuits (PICs) necessitates an integration platform that is scalable, high-throughput, cost-effective, and power-efficient. Here we present a monolithic InP on SOI platform to synergize the advantages of two mainstream photonic integration platforms: Si photonics and InP photonics. This monolithic InP/SOI platform is realized through the selective growth of both InP sub-micron wires and large dimension InP membranes on industry-standard (001)-oriented silicon-on-insulator (SOI) wafers. The epitaxial InP is in-plane, dislocation-free, site-controlled, intimately positioned with the Si device layer, and placed right on top of the buried oxide layer to form “InP-on-insulator”. These attributes allow for the realization of various photonic functionalities using the epitaxial InP, with efficient light interfacing between the III–V devices and the Si-based waveguides. We exemplify the potential of this InP/SOI platform for integrated photonics through the demonstration of lasers with different cavity designs including subwavelength wires, square cavities, and micro-disks. Our results here mark a critical step forward towards fully-integrated Si-based PICs.