Sensitive and Stable Tin–Lead Hybrid Perovskite Photodetectors Enabled by Double‐Sided Surface Passivation for Infrared Upconversion Detection

Yan, Zhao; Li, Chenglong; Jiang, Jinchi; Wang, Boming; Shen, Liang

doi:10.1002/smll.202001534

Cited by 80 publications

(93 citation statements)

References 88 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[19,120] Apart from improving the wettability of organic films, the PFN-Br layer was shown to result in defect reduction in perovskite films owing to increasing the grain sizes and passivation roles. [19] At present, other buffer layers, including polyvinylpyrrolidone (PVP), [121] ITO 2 -Cl, [20] poly(9-vinylcarbazole) (PVK), [122] perylene, [123] phenethylammonium bromide (PEABr), [124] phenethylammonium iodide (PEAI), [125] 1,3,4,5,7,8-hexafluorotetracyanonaphthoquinodimethane (F 6 TCNQ), [126] and self-assembly monolayers, [127][128][129] are also broadly employed and have proven to improve perovskite grain sizes and morphologies, as we summarized in Table 2.…”

Section: Surface Buffer Materials For Growing Better Perovskitesmentioning

confidence: 99%

Recent Progress on Perovskite Surfaces and Interfaces in Optoelectronic Devices

Luo

Dumont

et al. 2021

Advanced Materials

View full text Add to dashboard Cite

conversion efficiencies (PCEs) of perovskite solar cells (PeSCs) have already surpassed 25%, [4] which is comparable to current industrial-grade mono-crystalline silicon solar cells. This fantastic efficiency combined with potentially low-cost fabrication makes them more attractive than the most efficient photovoltaic technologies. [5] Similarly, perovskite light-emitting diodes (PeLEDs) are shown to have an extraordinary performance with external quantum efficiencies (EQEs) exceeding 20% in devices made from the solution phase at low temperatures. [6][7][8] We associated these notable improvements on device performance with lessons learned from organic optoelectronics and other semiconductor devices. Typically, many empirical approaches learned from others such as structural optimization, [9] interface engineering, [10] defects passivation, [11] etc., have been considered optimizing the carrier injection/extraction and mitigating undesirable non-radiative recombination losses. [12][13][14][15][16] Nonetheless, there is plenty of room optimizing nonradiative recombination losses in the bulk and at the interfaces to reach the efficiency limits. [17,18] Historically, band misalignments and interfacial defects have been considered the predominant factors responsible for the undesirable recombination at the various interfaces in devices. [19][20][21] In light of band misalignment, the resulting nonradiative recombination losses at the perovskite interfaces cause a substantial reduction in open-circuit voltages (V oc ) of the PeSCs, [14] mainly because of charge extraction suppression. For example, an energy barrier height of >0.1 eV is sufficient to block the extraction of majority carriers and to block the minority carriers from entering the undesirable transport layer, resulting in efficiency losses. [22] The presence of a charge injection barrier is also known to impact the turn-on voltage and device efficiency of PeLEDs. [23] Moreover, the deep-level defect-assisted recombination provides an additional path for intrinsic loss of charge carriers. [24][25][26] However, the origin and distribution of deep-level defects, a kind of defect that are far away from the band edge and can trap charge carriers, are highly debated topics. To date, there are several experimental observations confirming that a considerable density of deep-level defects retains at the interfaces of both the single-crystal and polycrystalline devices, and some surface passivation strategies can considerably eliminate the defects on the surfaces. [27][28][29] Based on photoemission Surfaces and heterojunction interfaces, where defects and energy levels dictate charge-carrier dynamics in optoelectronic devices, are critical for unlocking the full potential of perovskite semiconductors. In this progress report, chemical structures of perovskite surfaces are discussed and basic physical rules for the band alignment are summarized at various perovskite interfaces. Common perovskite surfaces are typically decorated by various compositional and structur...

show abstract

Section: Surface Buffer Materials For Growing Better Perovskitesmentioning

confidence: 99%

Recent Progress on Perovskite Surfaces and Interfaces in Optoelectronic Devices

Luo

Dumont

et al. 2021

Advanced Materials

View full text Add to dashboard Cite

show abstract

“…Photodetectors can convert optical signals to electronic signals, which are widely applied in environmental monitoring, image sensing, surveillance, smart phones, cameras, and so on. [1][2][3][4][5][6][7][8][9][10] Commercial photodetectors are still dominated by inorganic semiconductors based photodetectors such as silicon (Si) and indium gallium arsenide (InGaAs) based photodetectors thanks to their excellent charge-carrier mobility, small exciton DOI: 10.1002/lpor.202000262 binding energy and high stability. The manufacturing processes of inorganic photodetectors is rather complex and environment unfriendly, leading to a large amount of costs.…”

Section: Introductionmentioning

confidence: 99%

Recent Progress on Broadband Organic Photodetectors and their Applications

Zhao

Niu

et al. 2020

Laser & Photonics Reviews

187

144

View full text Add to dashboard Cite

As a promising candidate for next-generation photodetectors, organic photodetectors (OPDs) outperform the commercial inorganic photodetectors in terms of solution and large-area processability, mechanical flexibility, tunable spectral response range, low-cost manufacturing, and light weight. The OPDs with broadband spectral response attract an extensive attention due to their potential in wide application fields, such as flexible image sensing, surveillance, and health monitoring. In this review, recent advances in broadband OPDs are summarized as two sections: i) Photodiode type OPDs (PD-OPDs) based on thick-film strategy, ternary strategy, interfacial engineering, and multilayered strategy. ii) Photomultiplication type OPDs (PM-OPDs) with traps in active layer, traps in interfacial layer, and charge blocking layer. Some real applications on image sensors and photoplethysmography (PPG) sensors are also introduced on the basis of broadband OPDs. New insights on developing the broadband OPDs are put forward for improvement of broadband OPDs.

show abstract

“…Up to now, the most widely studied perovskite detectors are based on polycrystalline films, which included grain boundary, small grain sizes, and pinhole and low surface coverage ( Wang and Kim, 2017 ; Yang et al, 2017 ; Li et al, 2019 ; Zhao et al, 2020 ). A slow crystallization process is believed to provide a universal strategy to improve crystal quality ( Liu et al, 2018 ).…”

Section: Introductionmentioning

confidence: 99%

Thin MAPb0.5Sn0.5I3 Perovskite Single Crystals for Sensitive Infrared Light Detection

Zhang

Yang

et al. 2022

Front. Chem.

View full text Add to dashboard Cite

Metal halide perovskite single-crystal detectors have attracted increasing attention due to the advantages of low noise, high sensitivity, and fast response. However, the narrow photoresponse range of widely investigated lead-based perovskite single crystals limit their application in near-infrared (NIR) detection. In this work, tin (Sn) is incorporated into methylammonium lead iodide (MAPbI3) single crystals to extend the absorption range to around 950 nm. Using a space-confined strategy, MAPb0.5Sn0.5I3 single-crystal thin films with a thickness of 15 μm is obtained, which is applied for sensitive NIR detection. The as-fabricated detectors show a responsivity of 0.514 A/W and a specific detectivity of 1.4974×1011 cmHz1/2/W under 905 nm light illumination and –1V. Moreover, the NIR detectors exhibit good operational stability (∼30000 s), which can be attributed to the low trap density and good stability of perovskite single crystals. This work demonstrates an effective way for sensitive NIR detection.

show abstract

Sensitive and Stable Tin–Lead Hybrid Perovskite Photodetectors Enabled by Double‐Sided Surface Passivation for Infrared Upconversion Detection

Cited by 80 publications

References 88 publications

Recent Progress on Perovskite Surfaces and Interfaces in Optoelectronic Devices

Recent Progress on Perovskite Surfaces and Interfaces in Optoelectronic Devices

Recent Progress on Broadband Organic Photodetectors and their Applications

Thin MAPb0.5Sn0.5I3 Perovskite Single Crystals for Sensitive Infrared Light Detection

Contact Info

Product

Resources

About