Sneak current issue of RRAM-based crossbar array is one of the biggest hindrances for high-density memory application. The integration of an addition selector to each cell is one of the most familiar solutions to avoid this undesired cross-talk issue, and resistive switching parameters would affect on the storage density. This paper investigates the potential impact of different resistive switching parameters on crossbar arrays with one-diode one-resistor (1D1R) and one-selector one-resistor (1S1R) architectures. Results indicate that 1S1R architecture is a more scalable technology for high-density crossbar array than 1D1R, and the storage density of 1D1R- and 1S1R-based crossbar array shows little dependence on resistance values of high-resistance state and low-resistance state, which gives a guideline for choosing appropriate selectors for RRAM crossbar array with specific parameters.
Resistive switching with a self-rectifying feature is one of the most effective solutions to overcome the crosstalk issue in a crossbar array. In this paper, a memory device based on Pt/TiO
x
/W structure with self-rectifying property is demonstrated for write-once-read-many-times (WORM) memory application. After programming, the devices exhibit excellent uniformity and keep in the low resistance state (LRS) permanently with a rectification ratio as high as 104 at ± 1 V. The self-rectifying resistive switching behavior can be attributed to the Ohmic contact at TiO
x
/W interface and the Schottky contact at Pt/TiO
x
interface. The results in this paper demonstrate the potential application of TiO
x
-based WORM memory device in crossbar arrays.
Si‐based photodetectors (PDs) have been widely used in human‐machine interaction systems due to their robust optoelectronic properties despite limitations of significant large leakage current. To overcome this drawback, a functional overlayer of p‐type CuBi2O4 (CBO) is deposited on the surface of n‐type Si to build a novel photodetector involving a p–n heterojunction. Such an n‐Si/p‐CBO photodetector shows an ultralow dark current ≈10−11 A with a high photosensitivity up to 1.69 × 104 at zero bias, a strong self‐powered characteristics with a photovoltage near 0.55 V, and a fast rise and decay time around 0.1 and 0.3 ms. With these advantages, the device shows great performance in the optical communication system. The thickness‐dependent performance indicates that the top layer acts as a light‐harvesting semiconductor to generate, separate, and transport photocarriers through the built‐in heterojunction. Band alignment analysis confirms this result and reveals the formation of a type‐II heterojunction at the interface of n‐Si and p‐CBO layers. This work demonstrates an effective strategy to reduce the leakage current and improves the responsivity, detectivity, and response speed of Si‐based self‐powered photodetectors.
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