Impact of resistive switching parameters on resistive random access memory crossbar arrays

Abstract

Sneak current issue of RRAM-based crossbar array is one of the biggest hindrances for high-density memory application. The integration of an addition selector to each cell is one of the most familiar solutions to avoid this undesired cross-talk issue, and resistive switching parameters would affect on the storage density. This paper investigates the potential impact of different resistive switching parameters on crossbar arrays with one-diode one-resistor (1D1R) and one-selector one-resistor (1S1R) architectures. Results indicate that 1S1R architecture is a more scalable technology for high-density crossbar array than 1D1R, and the storage density of 1D1R- and 1S1R-based crossbar array shows little dependence on resistance values of high-resistance state and low-resistance state, which gives a guideline for choosing appropriate selectors for RRAM crossbar array with specific parameters.

Resistive switching memory for high density storage and computing*

“…Non-Si-based selectors can be divided into several groups according to their mechanisms, such as oxide diodes, threshold switch, oxide tunnel barrier, and mixed-ionic-electronic-conduction. Several groups have studied diodes made from semiconducting oxide hetero-junctions [48,62,63] and two-terminal metalinsulator-metal (MIM) structures. [54,64] In these works, the most considerable one was reported by Huang et al, with Ni/TiO 2 /Ni structure, having an ON/OFF ratio of ∼ 4700, [54] as show in Fig.…”

Flexible Threshold Switching Based on CsCu2I3 with Low Threshold Voltage and High Air Stability

“…The emergence of artificial intelligence and the internet of things raises an imperative demand for data storage, wherein resistive random access memory (ReRAM) with the merits of fast operation speed, simple device architecture, and high integration density represent a dominant candidate. , A crossbar architecture is usually preferred for ReRAM to realize large-scale commercial applications due to the ease of higher integration density; however, the crossbar structure is susceptible to sneak the path current, causing the crosstalk problem and sequential information misreading and high power consumption. Various strategies have been proposed for the sneak path problem, among which “one selector one resistor” with threshold switching devices (TSDs) as selectors represents the most promising strategy because of the associated high storage density and rectifying ratio. , Thus, a myriad of materials such as metal oxides, chalcogenides, and perovskite oxides, have been developed for TSDs, endowing the reversible conversion between a high resistive state (HRS) and a low resistive state (LRS) upon the applied voltages . However, such devices usually suffer from a high threshold voltage, mechanical rigidness, and high processing temperature, impeding their application to next-generation soft neuromorphic devices. − …”

“…Various strategies have been proposed for the sneak path problem, among which "one selector one resistor" with threshold switching devices (TSDs) as selectors represents the most promising strategy because of the associated high storage density and rectifying ratio. 3,4 Thus, a myriad of materials such as metal oxides, chalcogenides, and perovskite oxides, have been developed for TSDs, endowing the reversible conversion between a high resistive state (HRS) and a low resistive state (LRS) upon the applied voltages. 5 However, such devices usually suffer from a high threshold voltage, mechanical rigidness, and high processing temperature, impeding their application to next-generation soft neuromorphic devices.…”