Resistive switching memory for high density storage and computing*

Abstract

The resistive random access memory (RRAM) has stimulated a variety of promising applications including programmable analog circuit, massive data storage, neuromorphic computing, etc. These new emerging applications have huge demands on high integration density and low power consumption. The cross-point configuration or passive array, which offers the smallest footprint of cell size and feasible capability of multi-layer stacking, has received broad attention from the research community. In such array, correct operation of reading and writing on a cell relies on effective elimination of the sneaking current coming from the neighboring cells. This target requires nonlinear I–V characteristics of the memory cell, which can be realized by either adding separate selector or developing implicit build-in nonlinear cells. The performance of a passive array largely depends on the cell nonlinearity, reliability, on/off ratio, line resistance, thermal coupling, etc. This article provides a comprehensive review on the progress achieved concerning 3D RRAM integration. First, the authors start with a brief overview of the associative problems in passive array and the category of 3D architectures. Next, the state of the arts on the development of various selector devices and self-selective cells are presented. Key parameters that influence the device nonlinearity and current density are outlined according to the corresponding working principles. Then, the reliability issues in 3D array are summarized in terms of uniformity, endurance, retention, and disturbance. Subsequently, scaling issue and thermal crosstalk in 3D memory array are thoroughly discussed, and applications of 3D RRAM beyond storage, such as neuromorphic computing and CMOL circuit are discussed later. Summary and outlooks are given in the final.

Multifunctional Bipolar and Complementary Resistive Switching in HOIP Memristors by the Control of Compliance Current

“…It is dependent on the content of the memristor cells and aggravates in case of low resistance paths. 37 CRS is one of the solutions to this problem, where the cell is always in a HRS for the low voltage regime, also called read window (V R ). Such high resistance during the read window minimizes the current sneaking through the unselected devices.…”

“…Sneak current is an undesired current through unselected devices in the memristor array. It is dependent on the content of the memristor cells and aggravates in case of low resistance paths . CRS is one of the solutions to this problem, where the cell is always in a HRS for the low voltage regime, also called read window ( V R ).…”

Influences of the Temperature on the Electrical Properties of HfO2-Based Resistive Switching Devices

“…The variability is attributed to a change in the number of oxygen vacancies in the CF due to the stochastic nature of formation and rupturing during the set and reset transitions. The indeterminate tunneling gap formed in the reset process is responsible for the variability of R o f f [26]. Although temperature dependence can be observed in HRS, the cycle-to-cycle variability makes it difficult to study this dependence.…”

Attaining inhibition of sneak current and versatile logic operations in a singular halide perovskite memristive device by introducing appropriate interface barriers

“…The sneak current is dependent on the state of the memristor cells and exacerbates when low-resistance paths are present. 55 Various solutions such as 1T1R, 1S1R, 1D1R, CRS, and 1R structures have been proposed to address the cross-talk problem in the ReRAM cross-bar array. Among these solutions, the 1R structure with a self-rectifying effect offers advantages in effectively mitigating cross-talk currents, as well as featuring a simple device structure that is not constrained by additional components.…”