Attaining inhibition of sneak current and versatile logic operations in a singular halide perovskite memristive device by introducing appropriate interface barriers
Song He,
Xingyu Yu,
Juanjuan Wang
et al.
Abstract:We have created ReRAMs using ITO/UVO-treated a-ZnO/MAPbI3/Ag to minimize cross-talk currents. Remarkably, a single unit can execute 12 different 2-input sequential logic functions seamlessly.
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