Multifunctional Bipolar and Complementary Resistive Switching in HOIP Memristors by the Control of Compliance Current

Abstract

In this work, a hybrid organic−inorganic perovskite (HOIP)-based memristor is presented that shows two different types of bipolar resistive switching (BRS) by applying electric fields of opposite polarities. The first type of BRS, referred to as "type A" here, exhibits a V SET , V RESET , and ON/OFF ratio of 0.47 V, −0.32 V, and 369.91, respectively. On the other hand, the second type of BRS, referred to as "type B" here, exhibits a V SET and V RESET of −0.32 and 0.42 V, respectively, along with an excellent ON/OFF ratio of 5882.32. The pristine HOIP memristor requires a positive voltage for electroforming, followed by an exhibition of type A switching, which can be converted to type B by keeping the compliance to a lower value. Based on the experimental results, a possible mechanism for both types of BRS has been presented. Also, experimental data fitting shows that the memristor current during its high resistance state is dominated by the tunnelling mechanism for type A switching and by diffusion current for type B switching. On the other hand, both types show Ohmic conduction in their ON state. With proper selection and control of the polarity of operating field and compliance current, I−V characteristics similar to that expected from complementary resistive switching behavior can be obtained, which could be useful to reduce the problem of sneak current in resistive random-access memory crossbar arrays.

Mechanistic and Kinetic Analysis of Perovskite Memristors with Buffer Layers: The Case of a Two-Step Set Process

“…Perovskite-based memristive devices have been demonstrated to function as artificial synapses exhibiting essential synaptic behaviors for neuromuscular systems, pupil reflex, and light-sensitive optogenetic applications. − Additionally, integration of two-dimensional structures, , mixed formulations, , and nanocrystals , further increases the already vast degrees of freedom or state variables in perovskite-based memristors allowing tunability and versatility specific to the desired implementation. However, with the inclusion of various intermediate buffers, , a complete picture of the resistive switching mechanism is imperative for tailoring the design of reliable memristive devices for more versatile applications.…”

“…Therefore, effects related to energy level alignemnt at the perovskite interfaces do not appear to be related to the switching mechanims, and the resistive switching mechanism is of a different nature as explained below. The resistive switching with the SET and RESET processes occurring at opposite polarities of the applied voltage indicates a nonvolatile bipolar resistive switching characteristic of the memristor device. ,, Alternatively, Figure c shows the characteristic I – V response of a memristor without any buffer layer and a nonreactive contact (MAPbI 3 /Au). Interestingly, this device exhibits only the gradual SET1 process but without the abrupt SET2 process at the positive polarity.…”

“… 31 − 34 Additionally, integration of two-dimensional structures, 35 , 36 mixed formulations, 37 , 38 and nanocrystals 21 , 39 further increases the already vast degrees of freedom or state variables in perovskite-based memristors allowing tunability and versatility specific to the desired implementation. However, with the inclusion of various intermediate buffers, 40 , 41 a complete picture of the resistive switching mechanism is imperative for tailoring the design of reliable memristive devices for more versatile applications.…”

“…The resistive switching with the SET and RESET processes occurring at opposite polarities of the applied voltage indicates a nonvolatile bipolar resistive switching characteristic of the memristor device. 40 , 45 , 51 Alternatively, Figure 2 c shows the characteristic I – V response of a memristor without any buffer layer and a nonreactive contact (MAPbI 3 /Au). Interestingly, this device exhibits only the gradual SET1 process but without the abrupt SET2 process at the positive polarity.…”

Dual Resistive Switching Performance Derived from Ionic Migration in Halide Perovskite Based Memory

“…Bipolar switching devices offer more stable operation and better uniformity . Interestingly, some bipolar memory devices could exhibit dual resistive switching properties, including counterclockwise (CCW) and clockwise (CW) switching behaviors, which depend on the electroforming process. − To investigate the dual resistive switching behaviors in memory devices with different thin films could be helpful to get insight into the resistive switching mechanism.…”