Photo‐Enhanced Resistive Switching Effect in High‐Performance MAPbI₃ Memristors

Abstract

fourth scientific and technological revolution, which has been improved enough to readily surpass the human beings in certain specific classes of regions, including image classification and GAMIN (generative adversarial multiple imputation network). [1] It should be pointed out that the realization of AI requires efficient processing and storage of vast amounts of complex information between physically separated memory and processing units. However, the traditional computing hardwares and memories limited by the transfer speed and large power consumption of the data movement are no more physically nor economically feasible due to processing speed saturation and the von Neumann bottleneck. [2] Recently, the high-precision neuromorphic computing system emulating spiking neural networks of the human brain, as an efficient and energy-saving information processor, has been extremely considered a promising candidate to combat the intractable problem. [3] To date, the major ingre dients of neural processors, the memristors, have shown their potential for future electronic applications beyond physical dimension limitations along with their high scalability, simple architecture, rapid writing/reading/ erasing speed, ultralow power consumption, and high-datarate density. [4] Importantly, the memristors with the natural co-location of memory and compute are fully compatibleThe rapid development of artificial intelligence (AI) requires processing vast amounts of complex information, which has accelerated the exploration of neuromorphic computing systems. Artificial neuromorphic synapses based on memristors of organic-inorganic halide perovskites (OHPs) potentially exploit a niche area for brain-inspired neuromorphic computing, which can be operated as biological synapses to realize signal processing. Here, MAPbI 3 -based memristors with reliable resistance states triggered by electric fields or photons are reported. A model for resistive switching (RS) originated from conductive filaments (CFs) based on intrinsic defect migrations is proposed. Importantly, the unique photoresponsive characteristic provides the opportunity to enhance the RS through multifunctional photo-coupling. Enhanced by monochromatic illumination, memristors exhibit RS with remarkable characteristics such as ultralow operating voltage, high ON/OFF ratio (4.3 × 10 3 ), small HRS/LRS variation coefficient (29.91%/13.82%), stable endurance (10 4 cycles), long retention time (10 5 s), and ultralow power consumption. Moreover, photons can modulate the nonvolatile devices to maintain a great ON/OFF ratio over 9 days under ambient conditions without any encapsulation. The research presents plausible applications of memristors in coupling ions, electrons, and photons, thus contributing to applicability for multifunctional optoelectronics and optogenetics tunable neuromorphic systems.

Photoelectric Multilevel Memory Device based on Covalent Organic Polymer Film with Keto–Enol Tautomerism for Harsh Environments Applications

“…However, this movement was hindered by the built‐in electric field induced by the enol–imine to keto–enamine tautomerization, which ultimately exhibited an increase of V SET in light conditions. [ 44 ] Therefore, we further investigated the effect of keto–enol tautomerism structure on the photoenhanced RS behaviors of Py‐COP‐3 and Py‐COP‐0 by using photoluminescence (PL), transient photocurrent response measurements, and ultraviolet photoelectron spectroscopy (UPS). Compared with Py‐COP‐0, Py‐COP‐3 features a much lowered PL intensity that could originate from the retarded electron–hole recombination in Py‐COP‐3 (Figure S20, Supporting Information).…”

Influence of Lithium Doping on Volcanic-like Perovskite Memristors and Artificial Synaptic Simulation for Neurocomputing

“…C HRS and C LRS represent the coefficients of variations of HRS and LRS, respectively. The formula is C = σ/μ, where σ is the resistance standard deviation and μ is the mean value, and the relevant data comparison is shown in Figures S7b,c. In comparison with other devices reported in the literature shown in Table S2, our device has advantages in terms of the operating voltage, retention time, and other memristive properties.…”

Inorganic Lead-Free and Bismuth-Based Perovskite Nanoscale-Thick Films for Memristors and Artificial Synapse Applications

“…The present Cs 3 Bi 2 Cl 9 , Cs 3 Bi 2 Br 9 , and Cs 3 Bi 2 I 9 devices could be programmed with SET/RESET switching speeds of 120/520, 140/420, and 160/240 ns, respectively, confirming the high-speed characteristic (Figure S5). From the perspective of information storage speed, the faster switching response speed made the Cs 3 Bi 2 X 9 -based memristors more competitive than other devices. , To further verify the reproducibility of multiple memristor cells, the HRS, LRS, and corresponding ON/OFF ratio for 50 different cells are exhibited in Figure d,e. Notice that there was almost no difference in the LRS of Cs 3 Bi 2 Cl 9 , Cs 3 Bi 2 Br 9 , and Cs 3 Bi 2 I 9 memristors, However, the mean values of the HRS for the three were 5.2, 43.2, and 2051.1 KΩ, respectively, representing a very significant difference.…”