Improved Resistive Switching Uniformity of SiO<sub>2</sub> Electrolyte-Based Resistive Random Access Memory Device With Cu Oxidizable Electrode

Li, Yingtao; Yin, Lujie; Wu, Zewei; Li, Xiaoyan; Song, Xiaoqiang; Gao, Xiaoping; Fu, Liping

doi:10.1109/led.2019.2934145

Cited by 29 publications

(18 citation statements)

References 17 publications

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“…Figure d–f shows the statistical distributions of the set voltage ( V set ) and reset voltage ( V reset ) for the Al and Ag electrode device cycles. It can be noted that the dispersion of V set and V reset of the ITO/polymer/Al devices was narrower and the coefficient of variation was lower than Ag electrode samples. − Overall, the resistance switching characteristics of the Al electrode devices were improved compared with that of Ag electrode devices. As a result, the Al electrode exhibited better electrical storage characteristics.…”

Section: Resultsmentioning

confidence: 93%

Ternary Memory Devices Based on Bipolar Copolymers with Naphthalene Benzimidazole Acceptors and Fluorene/Carbazole Donors

Zhang¹,

Zhao²,

Bai³

et al. 2019

Macromolecules

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Functional polymers show great potential in information storage applications. However, most of these polymer-based memory devices demonstrate limited capacity because of binary memory characteristic. Herein, three novel donor−acceptor-type bipolar conjugated copolymers containing the naphthalene benzimidazole unit as the acceptor and fluorene/carbazol as the donor were synthesized by Suzuki cross-coupling reaction. When applied in memory devices, these as-prepared polymers exhibit unique ternary resistance switch memory behaviors with high switching current ratios of 1

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Section: Resultsmentioning

confidence: 93%

Ternary Memory Devices Based on Bipolar Copolymers with Naphthalene Benzimidazole Acceptors and Fluorene/Carbazole Donors

Zhang¹,

Zhao²,

Bai³

et al. 2019

Macromolecules

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“…Although the impact of Ag active TE on SiO 2 -CBRAMs has been studied by other groups [ 62 , 63 ], the main contribution of the present work is the demonstration of a relatively sharp transition slope, low V SET voltage and huge memory window. Moreover, we have to underline the completely forming-free nature of the proposed memory concept that is always beneficial in terms of periphery circuit design.…”

Section: Discussionmentioning

confidence: 95%

Emulating Artificial Synaptic Plasticity Characteristics from SiO2-Based Conductive Bridge Memories with Pt Nanoparticles

Bousoulas

Papakonstantinopoulos

Kitsios

et al. 2021

Micromachines

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The quick growth of information technology has necessitated the need for developing novel electronic devices capable of performing novel neuromorphic computations with low power consumption and a high degree of accuracy. In order to achieve this goal, it is of vital importance to devise artificial neural networks with inherent capabilities of emulating various synaptic properties that play a key role in the learning procedures. Along these lines, we report here the direct impact of a dense layer of Pt nanoparticles that plays the role of the bottom electrode, on the manifestation of the bipolar switching effect within SiO2-based conductive bridge memories. Valuable insights regarding the influence of the thermal conductivity value of the bottom electrode on the conducting filament growth mechanism are provided through the application of a numerical model. The implementation of an intermediate switching transition slope during the SET transition permits the emulation of various artificial synaptic functionalities, such as short-term plasticity, including paired-pulsed facilitation and paired-pulse depression, long-term plasticity and four different types of spike-dependent plasticity. Our approach provides valuable insights toward the development of multifunctional synaptic elements that operate with low power consumption and exhibit biological-like behavior.

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“…From the microscopic point of view, the stochasticity in the formation of the CF induces the nonuniformity in . In this regard, many efforts have been made to reduce this nonuniformity: Li et al showed that utilizing copper ions over silver ions improves the uniformity in CB-RAM because of the faster diffusion of the former 18 , whereas Kim et al used a cone-shaped Cu-ion source in CB-RAM 19 . Niu et al engineered field crowding using a narrow bottom electrode, whose edge forms a field-crowding location and in turn a CF growth site, to improve the stability of a HfO 2 ReRAM 20 .…”

Section: Resultsmentioning

confidence: 99%

“…Therefore, it is very important to study this nonuniformity during switching and determine solutions to reduce it. In this regard, many efforts have been expended to improve the switching uniformity [18][19][20][21][22][23][24] .…”

mentioning

confidence: 99%

Investigation of switching uniformity in resistive memory via finite element simulation of conductive-filament formation

Min

Jung

Kwon

2021

Sci Rep

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Herein, we present simulations of conductive filament formation in resistive random-access memory using a finite element solver. We consider the switching material, which is typically an oxide, as a two-phase material comprising low- and high-resistance phases. The low-resistance phase corresponds to a defective and conducting region with a high anion vacancy concentration, whereas the high-resistance phase corresponds to a non-defective and insulating region with a low anion-vacancy concentration. We adopt a phase variable corresponding to 0 and 1 in the insulating and conducting phases, respectively, and we change the phase variable suitably when new defects are introduced during voltage ramp-up for forming. Initially, some defects are embedded in the switching material. When the applied voltage is ramped up, the phase variable changes from 0 to 1 at locations wherein the electric field exceeds a critical value, which corresponds to the introduction of new defects via vacancy generation. The applied voltage at which the defects percolate to form a filament is considered as the forming voltage. Here, we study the forming-voltage uniformity using simulations, and we find that for typical planar-electrode devices, the forming voltage varies significantly owing to the stochastic location of the initial defects at which the electric field is “crowded.” On the other hand, a protruding electrode can improve the switching uniformity drastically via facilitating the deterministic location of electric-field crowding, which also supported by the reported experimental results.

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Improved Resistive Switching Uniformity of SiO₂ Electrolyte-Based Resistive Random Access Memory Device With Cu Oxidizable Electrode

Cited by 29 publications

References 17 publications

Ternary Memory Devices Based on Bipolar Copolymers with Naphthalene Benzimidazole Acceptors and Fluorene/Carbazole Donors

Ternary Memory Devices Based on Bipolar Copolymers with Naphthalene Benzimidazole Acceptors and Fluorene/Carbazole Donors

Emulating Artificial Synaptic Plasticity Characteristics from SiO2-Based Conductive Bridge Memories with Pt Nanoparticles

Investigation of switching uniformity in resistive memory via finite element simulation of conductive-filament formation

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Improved Resistive Switching Uniformity of SiO2 Electrolyte-Based Resistive Random Access Memory Device With Cu Oxidizable Electrode

Cited by 29 publications

References 17 publications

Ternary Memory Devices Based on Bipolar Copolymers with Naphthalene Benzimidazole Acceptors and Fluorene/Carbazole Donors

Ternary Memory Devices Based on Bipolar Copolymers with Naphthalene Benzimidazole Acceptors and Fluorene/Carbazole Donors

Emulating Artificial Synaptic Plasticity Characteristics from SiO2-Based Conductive Bridge Memories with Pt Nanoparticles

Investigation of switching uniformity in resistive memory via finite element simulation of conductive-filament formation

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Improved Resistive Switching Uniformity of SiO₂ Electrolyte-Based Resistive Random Access Memory Device With Cu Oxidizable Electrode