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Electro‐optic (E‐O) materials are essential to modern information society, especially for optical switches, modulators, and filters in optical communication. In this paper, ultrahigh transparent (1−x)Pb(Mg1/3Nb2/3)O3‐xPbTiO3 (PMN‐PT) relaxor ferroelectric ceramics are fabricated. The effect of Sm‐doping content (0, 0.5, 1.0, 1.5, and 2.0 mol%) on PMN‐PT transparent ceramics is systematically investigated on the optical transparency, electro‐optic coefficient, extinction ratio, and half‐wave voltage. Results indicate that 0.5 mol% Sm‐doped PMN‐PT ceramic shows the optimal comprehensive performance, including high transparency of 69.6%, large quadratic E‐O coefficient of 35 × 10–16 m2 V−2, decent extinction ratio of 32 dB, and low half‐wave voltage (113 V at d = L = 1 mm). An electro‐optic modulator is designed based on the PMN‐PT transparent ceramics and its application in optical communication is realized, such as rapid information modulation, analog signal (audio frequency), and digital signal (graphic patterns) transmission. These results indicate that Sm‐doped PMN–xPT transparent ceramics are promising candidates for E‐O modulation applications.

Composition dependence of interface control, band alignment and electrical properties of HfTiON/Si grown by sputtering has been studied by spectroscopy ellipsometry (SE), x-ray photoelectron spectroscopy (XPS) and electrical measurement. Analysis from XPS has confirmed that the interfacial layer consisting of silicate and SiO x is formed unavoidably, irrespective of composition ratio. Meanwhile, reduction in band gap and asymmetric band alignment has been detected for HfTiON films with the increase in Ti composition. To meet the requirements of high-k dielectrics with the barrier height of over 1 eV, the incorporation composition ratio needs to be carefully optimized. As a result, improved C-V characteristics and reduced leakage current have been achieved from HfTiON gate dielectric MOS capacitors with optimized composition ratio of Hf:Ti = 1:1, which can be attributed to the reduction in oxygen-related traps and the obtained near-symmetric band alignment relative to Si.

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Transparent piezoelectric materials are capable of coupling several physical effects such as optics, acoustics, electricity, and mechanical deformation together, which expands applications for mechanical-electro-optical multifunctional devices. However, piezoelectricity, transparency, and Curie temperature restrict each other, so it is difficult to achieve high piezoelectricity with both good transparency and a high Curie point. In this paper, Sm-doped 24Pb(In 1/2 Nb 1/2 )O 3 -42Pb(Mg 1/3 Nb 2/3 )O 3 -34PbTiO 3 (PIN-PMN-PT) transparent ceramic with a high piezoelectric coefficient of 905 pC/N, excellent electro-optical coefficient of 814 pm/V, and high Curie-point of 179 °C is fabricated. Sm doping effect on the phase structures, piezoelectricity, ferroelectricity, optical transparency, electro-optical properties, and thermal stability is systematically investigated. Compared with PMN-PT transparent ceramics, PIN-PMN-PT transparent ceramics exhibit better temperature stability. Electro-optical modulation and energy conversion are achieved using PIN-PMN-PT transparent piezoelectric ceramic, which indicates that it has great potential to develop mechanical−electrical−optical multifunctional coupling devices for optical communication, energy harvesting, photoacoustic imaging, and so on.