Besides widely used surface passivation, engineering the film crystallization is an important and more fundamental route to improve the performance of all-inorganic perovskite solar cells.H erein, we have developed au rea-ammonium thiocyanate (UAT)m olten salt modification strategy to fully release and exploit coordination activities of SCN À to deposit high-quality CsPbI 3 film for efficient and stable all-inorganic solar cells.T he UATi sd erived by the hydrogen bond interactions between urea and NH 4 + from NH 4 SCN.W itht he UAT, the crystal quality of the CsPbI 3 film has been significantly improved and al ong single-exponential charge recombination lifetime of over 30 ns has been achieved. With these benefits,t he cell efficiency has been promoted to over 20 %( steady-state efficiency of 19.2 %) with excellent operational stability over 1000 h. These results demonstrate apromising development route of the CsPbI 3 related photoelectric devices.

The mixed halide perovskites have become famous for their outstanding photoelectric conversion efficiency among new-generation solar cells. Unfortunately, for perovskites, little effort is focused on stress engineering, which should be emphasized for highly efficient solar cells like GaAs. Herein, polystyrene (PS) is introduced into the perovskite solar cells as the buffer layer between the SnO 2 and perovskite, which can release the residual stress in the perovskite during annealing because of its low glass transition temperature. The stress-free perovskite has less recombination, larger lattices, and a lower ion migration tendency, which significantly improves the cell's efficiency and device stability. Furthermore, the so-called inner-encapsulated perovskite solar cells are fabricated with another PS capping layer on the top of perovskite. As high as a 21.89% photoelectric conversion efficiency (PCE) with a steady-state PCE of 21.5% is achieved, suggesting that the stress-free cell can retain almost 97% of its initial efficiency after 5 days of "day cycle" stability testing.

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The aim of the present study was to investigate the effect of hydrogen sulfide (H(2)S) signaling by nitric oxide (NO) in isolated rat aortas and cultured human umbilical vein endothelial cells (HUVECs). Both administration of H(2)S and NaHS, as well as endogenous H(2)S, reduced NO formation, endothelial nitric oxide synthase (eNOS) activity, eNOS transcript abundance, and l-arginine (l-Arg) transport (all P < 0.01). The kinetics analysis of eNOS activity and l-Arg transport showed that H(2)S reduced V(max) values (all P < 0.01) without modifying K(m) parameters. Use of selective NOS inhibitors verified that eNOS [vs. inducible NOS (iNOS) and neuronal NOS (nNOS)] was the specific target of H(2)S regulation. H(2)S treatment (100 micromol/l) reduced Akt phosphorylation and decreased eNOS phosphorylation at Ser1177. H(2)S reduced l-Arg uptake by inhibition of a system y+ transporter and decreased the CAT-1 transcript. H(2)S treatment reduced protein expression of eNOS but not of nNOS and iNOS. Pinacidil (K(ATP) channel opener) exhibited the similar inhibitory effects on the l-Arg/NOS/NO pathway. Glibenclamide (K(ATP) channel inhibitor) partly blocked the inhibitory effect of H(2)S and pinacidil. An in vivo experiment revealed that H(2)S downregulated the vascular l-Arg/eNOS/NO pathway after intraperitoneal injection of NaHS (14 micromol/kg) in rats. Taken together, our findings suggest that H(2)S downregulates the vascular l-Arg/NOS/NO pathway in vitro and in vivo, and the K(ATP) channel could be involved in the regulatory mechanism of H(2)S.

The objective of this study is to summarize the clinical and pathologic characteristics of malignant struma ovarii to facilitate the early diagnosis and treatment of this disease. All 144 patients were females from 27 countries. The mean age of the patients at diagnosis was 42.6 years. Overall, 35.71% of the patients underwent unilateral oophorectomy, 58.57% of the patients underwent bilateral oophorectomy, 5.72% of the patients were not ovariectomized, and 38.57% of the patients received radioactive iodine treatment with an average dose of 158.22 mCI each time. “Impure” types accounted for 70.19% of the cases, while pure types accounted for 29.81% of the cases. Among these cases, papillary thyroid carcinoma accounted for 50.00%, follicular thyroid carcinoma accounted for 26.47%, follicular variant of papillary thyroid carcinoma accounted for 18.63%, papillary and follicular mixed thyroid carcinoma accounted for 2.94%, anaplastic carcinoma accounted for 0.98%, and medullary carcinoma accounted for 0.98%. In total, 21 patients (51.22%) had elevated CA125. More than half of the patients (51.94%) had metastasis outside the ovary. The most common metastatic site was the pelvic cavity. The misdiagnosis rate was 17.27%. Mortality was related to metastasis and the cancer type. Gene mutations were found in the NRAS, KRAS, BRAF, and KIT genes and were similar to those in thyroid carcinoma, but some patients (37.5%) did not exhibit any gene mutations. Regardless of the treatment received, the survival rate is high. Treatment could initially include ovariectomy; however, in cases with metastasis and iodine uptake of the metastatic tumor, thyroidectomy, radioactive iodine therapy, and thyroid hormone inhibiting therapy are indicated.

All‐inorganic CsPbI3 perovskite has emerged as an important photovoltaic material due to its high thermal stability and suitable bandgap for tandem devices. Currently, the cell performance of CsPbI3 solar cells is mainly subject to a large open‐circuit voltage (VOC) deficit. Herein, a multifunctional room‐temperature molten salt, dimethylamine acetate (DMAAc) is demonstrated, which not only directly acts as a solvent for precursor solutions, but also regulates the phase conversion process of the CsPbI3 film for high‐efficiency photovoltaics. DMAAc can stabilize the DMAPbI3 structure and eliminate the Cs4PbI6 intermediate phase, which is easily spatially segregated. Meanwhile, a new homogeneous intermediate phase DMAPb(I,Ac)3 is formed, which finally affords high‐quality CsPbI3 films. With this approach, the charge capture activity of defects in the CsPbI3 film is significantly suppressed. Consequently, a VOC of 1.25 V and >21% power conversion efficiency are achieved, which is the record highest reported thus far. This intermediate phase‐regulation strategy is believed to be applicable to other perovskite material systems.

extensively researched from the material to the device in the past few years; however, the power conversion efficiency (PCE) of CsPbI 3 -based solar cells still lags behind hybrid perovskite solar cells (PSCs) as well as its maximum theoretical PCE. [2] Currently, the application of CsPbI 3 in PSCs is mainly perplexed by unsatisfied CsPbI 3 film quality, including black-phase stability, defects, and crystallinity. [3] Particularly, the black-phase CsPbI 3 is moisture-induced phase instability, that is, the moisture could easily result in phase transition from black phase into unfavorable yellow non-perovskite phase at room temperature. [4] Therefore, a big challenge is stabilizing high-quality black-phase CsPbI 3 films for efficient devices.Generally, the CsPbI 3 black-phase instability is mainly due to its lower tolerance factor, that is, the small size of the Cs + could not sustain PbI 6 octahedra in the cubic α-CsPbI 3 structure, easily leading to the δ-CsPbI 3 transformation. [3,4] To stabilize the black phase of CsPbI 3 films, different methods have been attempted, such as bromide partial iodide substitution to give the CsPbI 2 Br or CsPbIBr 2 , reducing crystal sizes or introducing intermediate phases in some degree. [5] Furthermore, controllable alien element doping into CsPbI 3 films (i.e., Ca 2+ , Sn 2+ , Ge 2+ , Sr 2+ , Mn 2+ , In 3+ , Bi 3+ , etc.) could increase the tolerance factor of the CsPbI 3 in some degree. [6,7] Typically, the replacement of PbI 2 with DMAPbI 3 (HPbI 3 ) as the Pb 2+ resource has directly promoted the PCE to ≈20% along with modifying crystallinity process or introducing surface passivation. [8] Even so, severe non-radiative recombination of the CsPbI 3 is still detrimental to the cell performance and opencircuit voltage (V oc ), in the meantime, the stability of CsPbI 3 perovskite solar cells has not been fully solved yet. [1,9] In addition, unlike hybrid perovskites, post-treatment toward passivating and stabilizing the CsPbI 3 films by in situ introducing low-dimensional perovskites, has not worked well sometimes, especially for the DMAPbI 3 system. [2c,10] Obviously, it is urgent to explore effective strategies to modify CsPbI 3 perovskite crystal growth, passivate defects, and improve the anti-humidity ability of inorganic perovskite solar cells.In current work, Ge element has been firstly incorporated into CsPbI 3 perovskite solar cells based on DMAPbI 3 -based precursor systems. Our investigation reveals that Ge incorporation can modify crystallization growth of CsPb 1−x Ge x I 3 films, Aiming at stable CsPbI 3 perovskite solar cells, Ge incorporated for the first time into DMAPbI 3 -based precursor systems. Ge incorporation is found to be able to modify crystallization growth of CsPb 1−x Ge x I 3 films and reduce annealing temperature and treatment time by lowering CsPbI 3 formation energy. The champion power conversion efficiency (PCE) of 19.52% is achieved with a certified PCE of 18.8%, which is the highest performance of CsPbI 3 PSCs with alien element-dopin...

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