Based on a kinetic model involving oxidant diffusion and an oxidation‐reduction reaction, a 3‐parameter equation is derived relating the change in the concentration of thermally induced carrier donors in common metal‐oxide semiconductors (such as indium–gallium–zinc oxide and indium–tin–zinc oxide) to heat‐treatment time. The change in the concentration of such donors is characterized by measuring the shift in the turn‐on voltage of a thin‐film transistor subjected to heat treatments in different atmospheres for different durations. The model parameters are extracted using optimal curve‐fitting techniques, leading to the determination of relevant activation energies from the temperature dependence of the extracted parameters. The proposed model is found to be applicable to metal‐oxide semiconductors of different compositions. It is discovered that the generation of donors in a non‐oxidizing atmosphere is largely suppressed at a temperature below 250 °C, but the effective annihilation of the donors spans over a wider temperature range in an oxidizing atmosphere.
A recently proposed kinetic model describing the oxidation
and reduction of donor‐defects in semiconducting metaloxide thin films has been applied to characterize the
properties of the donor‐defects in fluorinated indiumgallium‐zinc oxide. The excellent agreement of the
measured data with the modelling curves is a nice
demonstration of the utility of the model as a useful tool
for characterizing the nature of the donor‐defects in metaloxide films.
This work reported the effects of the temperature of fluorination
by fluorine plasma treatment on the performance, reliability, and
stability of an indium‐gallium‐zinc oxide thin‐film transistor.
While fluorination leads to a more positive threshold voltage,
improved reliability against electrical stress and improved
stability against non‐oxidizing heat‐treatment, that performed at
a higher temperature is found to be more effective.
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