P‐1.3: Application of a Kinetic Model to the Characterization of Donor‐Defects in a Fluorinated Metal‐Oxide Semiconductor

Abstract

A recently proposed kinetic model describing the oxidation and reduction of donor‐defects in semiconducting metaloxide thin films has been applied to characterize the properties of the donor‐defects in fluorinated indiumgallium‐zinc oxide. The excellent agreement of the measured data with the modelling curves is a nice demonstration of the utility of the model as a useful tool for characterizing the nature of the donor‐defects in metaloxide films.