P‐1.5: The effects of the temperature of fluorination treatment on the reliability of an indium‐gallium‐zinc oxide thin‐film transistor

Abstract

This work reported the effects of the temperature of fluorination by fluorine plasma treatment on the performance, reliability, and stability of an indium‐gallium‐zinc oxide thin‐film transistor. While fluorination leads to a more positive threshold voltage, improved reliability against electrical stress and improved stability against non‐oxidizing heat‐treatment, that performed at a higher temperature is found to be more effective.