Abstract-This paper describes the 750-Vdc, 100-kW, 20-kHz bidirectional isolated dual-active-bridge (DAB) dcdc converters using four 1.2-kV 400-A SiC-MOSFET dual modules with or without Schottky barrier diodes (SBDs). When no SBD is integrated into each dual module, the conversion efficiency from the dc-input to the dc-output terminals is accurately measured to be 98.0% at the rated-power (100 kW) operation, and the maximum conversion efficiency is as high as 98.8% at 41-kW operation, excluding the gatedrive and control-circuit losses from the total power loss. The bidirectional isolated DAB dc-dc converters are so flexible that series and/or parallel connections of their individual input and output terminals make it easy to expand the voltage and current ratings for various applications such as the so-called "solid-state transformer" or "power electronic transformer." Index Terms-Bidirectional isolated dc-dc converters, conversion efficiency, dual-active-bridge configuration, SiC-MOSFET modules.
This paper describes a 3.5-V operation HBT MMIC power amplifier module for use in GSM/EDGE dual-mode, 900/1800/1900-MHz triple band handset applications. With diode switches and a band select switch built on the MMIC, the module delivers a Pout of 35.5 dBm and a PAE of about 50% for GSM900, a 33.4-dBm Pout and a 45% PAE for GSM 1800/1900. While satisfying an error vector magnitude (EVM) of less than 4% and a receive-band noise power of less than -83 dBm/100 kHz, the module also delivers a 29.5 dBm Pout and a PAE of over 25% for EDGE900, a 28.5 dBm Pout and a PAE of over 25% for EDGE1800/1900.
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