2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA) 2014
DOI: 10.1109/ipec.2014.6869672
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Power-loss breakdown of a 750-V, 100-kW, 20-kHz bidirectional isolated DC-DC converter using SiC-MOSFET/SBD dual modules

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Cited by 24 publications
(9 citation statements)
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“…As (19) demonstrates, leakage inductance Ls is proportional to the square of primary winding turns Np• So by changing the number of primary winding turns, leakage inductance Ls, the key parameter in the energy transfer process of DAB converter, can be adjusted on a large scale, enabling the possibility of reducing loss over wide load range.…”
Section: A Leakage Inductance Variation With Winding Turnsmentioning
confidence: 99%
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“…As (19) demonstrates, leakage inductance Ls is proportional to the square of primary winding turns Np• So by changing the number of primary winding turns, leakage inductance Ls, the key parameter in the energy transfer process of DAB converter, can be adjusted on a large scale, enabling the possibility of reducing loss over wide load range.…”
Section: A Leakage Inductance Variation With Winding Turnsmentioning
confidence: 99%
“…A 750-V 100-kW 20-kHz bidirectional isolated dual active bridge (DAB) dc dc converter is constructed in [19], and its overall power loss is divided into conduction and switching losses produced by the SiC modules, the iron and copper losses due to magnetic devices, and the other unknown loss. An adaptive inductor is proposed in [20] as the main energy transfer element of a phase-shift dual half bridge (DRB) converter so that the circulating energy can be optimized to maintain ZVS at light load and minimize the conduction losses at heavy load as well.…”
mentioning
confidence: 99%
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“…In the power electronics field, on the other hand, SiC (Silicon Carbide) has recently been attracting significant attention for its dominant features such as lower power loss, high‐speed and high‐temperature operation . The SiC's dielectric breakdown electric field is larger than that of Si by about a digit and thus the SiC chip thickness can be reduced to 1/10 of the Si thickness thereby reducing on‐resistance in conductive mode theoretically by two digits or more.…”
Section: Introductionmentioning
confidence: 99%
“…The Dual Active Bridge DC-DC Converter is most often the topology of choice for applications where bi-directional power flow is required between two DC sources, with its inherent capability to transfer energy in either direction without control complexity or increased component count [1] and its particular advantages of efficiency [2], galvanic isolation and high power density. However, to maintain high DAB conversion efficiency it is desirable to operate as much as possible using Zero-Volt-Switching (ZVS) to minimise device switching losses, particularly as the converter switching frequencies increase with fast switching Silicon-Carbide and Gallium-Nitride (GaN) devices [3].…”
Section: Introductionmentioning
confidence: 99%