This paper describes a 3.5-V operation HBT MMIC power amplifier module for use in GSM/EDGE dual-mode, 900/1800/1900-MHz triple band handset applications. With diode switches and a band select switch built on the MMIC, the module delivers a Pout of 35.5 dBm and a PAE of about 50% for GSM900, a 33.4-dBm Pout and a 45% PAE for GSM 1800/1900. While satisfying an error vector magnitude (EVM) of less than 4% and a receive-band noise power of less than -83 dBm/100 kHz, the module also delivers a 29.5 dBm Pout and a PAE of over 25% for EDGE900, a 28.5 dBm Pout and a PAE of over 25% for EDGE1800/1900.
A GSM900/1800 Dual-Band AlGaAs /GaAs HBT(Hetero-junction Bipolar Transistor) MMIC power amplifier has been developed. It includes power amplifiers for GSM900 and DCS1800, constant voltage bias circuits and d.c. switch. A novel multi-finger HBT layout which can realize uniform output load impedance and thermal distribution of each HBT finger are applied to the final-stage HBT in order to achieve high efficiency. The developed MMIC amplifier has provided output power of 34.5dBm and power-added efficiency of 53.4% for GSM900, and output power of 32.OdBm and power-added efficiency of 41.8% for DCS1800.
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