A New Approach to Prevent the Burnout Under Mismatching Load Conditions in High Power HBT

Suzuki, Satoshi; Yamamoto, Kazuya; Asada, T.; Choumei, K.; Inoue, Akihisa; Hattori, Reiji; Yoshida, N.; Shimura, Takaaki

doi:10.1109/euma.1999.338424

Cited by 2 publications

(1 citation statement)

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“…To address impedance mismatch issues, conventional practice involves placing an isolator between the power amplifier (PA) and the antenna. The isolator safeguards the transistor from high current and voltage fluctuations during load mismatch, ultimately improving device performance [5,6]. Despite its effectiveness, this approach proves impractical for handheld devices due to the isolator's bulkiness, cost, and adverse impact on transmission power.…”

Section: Introductionmentioning

confidence: 99%

RF Characterization of GaAs HBT under Load Mismatch with Reverse Wave Injection Technique

Xu,

Tong,

2023

Micromachines

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RF PAs need to be reliable enough to protect them from damage under load mismatch conditions. This paper investigated the characteristics of GaAs heterojunction bipolar transistors (HBTs) under load mismatch conditions using a novel reverse wave injection technique to realize large VSWR ruggedness measurement with the circle centered at 50 Ohm and optimal impedance separately to analyze the device in real applications. With a real-time waveform measurement system, the RF voltage and current waveform information can be acquired, which provide a more-accurate view of what is occurring at the current generator plane of the HBT device. Thereby, the potential failure mechanisms and load impedance can be identified to design the most-suitable PA circuits in communication systems.

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Section: Introductionmentioning

confidence: 99%